A K-band monolithic broadband low phase noise voltage controlled oscillators using HBT-HEMT cascode topology

Shu Yan Huang, Chih Chun Shen, Yu Cheng Liu, Yen Han Liao, Hong Yeh Chang, Yo Shen Lin, Yu Chi Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a K-band monolithic broadband low phase noise voltage controlled oscillator (VCO) using heterojunction bipolar transistor (HBT) and pseudomorphic high-electron mobility transistor (HEMT) cascode topology is presented. The bandwidth of negative resistance can be enhanced, and the low phase noise performance can be achieved using the cascode HEMT-HBT topology. The proposed K-band VCO features a tuning range of 6.61 GHz, and a phase noise of -100.3 dBc/Hz at 1-MHz offset, and a dc power consumption of 31.5 mW. The chip size of the proposed VCO is 1 × 1 mm2.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Pages784-786
Number of pages3
DOIs
StatePublished - 2013
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
Duration: 5 Nov 20138 Nov 2013

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2013 3rd Asia-Pacific Microwave Conference, APMC 2013
Country/TerritoryKorea, Republic of
CitySeoul
Period5/11/138/11/13

Keywords

  • GaAs
  • HBT
  • HEMT
  • phase noise
  • VCO

Fingerprint

Dive into the research topics of 'A K-band monolithic broadband low phase noise voltage controlled oscillators using HBT-HEMT cascode topology'. Together they form a unique fingerprint.

Cite this