A K -Band High Efficiency High Power Monolithic GaAs Power Oscillator Using Class-E Network

Hong Yeh Chang; Chi Hsien Lin; Yu Cheng Liu; Wen Ping Li; Yu Chi Wang

doi:10.1109/LMWC.2016.2629978

A K -Band High Efficiency High Power Monolithic GaAs Power Oscillator Using Class-E Network

Hong Yeh Chang, Chi Hsien Lin, Yu Cheng Liu, Wen Ping Li, Yu Chi Wang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This letter presents design of a K-band high power high efficiency monolithic GaAs power oscillators using class-E load network with finite dc-feed inductance. To further extend the operation frequency up to millimeter-wave band with high efficiency, the core transistor is operated in the saturated region with overdriven condition to obtain the bifurcated current waveform. The proposed power oscillator is fabricated using a 0.15- μ m GaAs pseudomorphic high-electron mobility transistor process, and it features a tuning range from 23.5 to 24.5 GHz, a peak efficiency of 19%, a maximum output power of 21 dBm, and a phase noise of -106.3 dBc/Hz at 1-MHz offset.

Original language	English
Article number	7792653
Pages (from-to)	55-57
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	27
Issue number	1
DOIs	https://doi.org/10.1109/LMWC.2016.2629978
State	Published - Jan 2017

Keywords

GaAs
MMIC
PHEMT
high efficiency
low phase noise oscillators

Access to Document

10.1109/LMWC.2016.2629978

Cite this

@article{a35ae266c524429783bff3c0a27eb9ac,

title = "A K -Band High Efficiency High Power Monolithic GaAs Power Oscillator Using Class-E Network",

abstract = "This letter presents design of a K-band high power high efficiency monolithic GaAs power oscillators using class-E load network with finite dc-feed inductance. To further extend the operation frequency up to millimeter-wave band with high efficiency, the core transistor is operated in the saturated region with overdriven condition to obtain the bifurcated current waveform. The proposed power oscillator is fabricated using a 0.15- μ m GaAs pseudomorphic high-electron mobility transistor process, and it features a tuning range from 23.5 to 24.5 GHz, a peak efficiency of 19%, a maximum output power of 21 dBm, and a phase noise of -106.3 dBc/Hz at 1-MHz offset.",

keywords = "GaAs, MMIC, PHEMT, high efficiency, low phase noise oscillators",

author = "Chang, {Hong Yeh} and Lin, {Chi Hsien} and Liu, {Yu Cheng} and Li, {Wen Ping} and Wang, {Yu Chi}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2017",

month = jan,

doi = "10.1109/LMWC.2016.2629978",

language = "???core.languages.en_GB???",

volume = "27",

pages = "55--57",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

number = "1",

}

TY - JOUR

T1 - A K -Band High Efficiency High Power Monolithic GaAs Power Oscillator Using Class-E Network

AU - Chang, Hong Yeh

AU - Lin, Chi Hsien

AU - Liu, Yu Cheng

AU - Li, Wen Ping

AU - Wang, Yu Chi

PY - 2017/1

Y1 - 2017/1

N2 - This letter presents design of a K-band high power high efficiency monolithic GaAs power oscillators using class-E load network with finite dc-feed inductance. To further extend the operation frequency up to millimeter-wave band with high efficiency, the core transistor is operated in the saturated region with overdriven condition to obtain the bifurcated current waveform. The proposed power oscillator is fabricated using a 0.15- μ m GaAs pseudomorphic high-electron mobility transistor process, and it features a tuning range from 23.5 to 24.5 GHz, a peak efficiency of 19%, a maximum output power of 21 dBm, and a phase noise of -106.3 dBc/Hz at 1-MHz offset.

AB - This letter presents design of a K-band high power high efficiency monolithic GaAs power oscillators using class-E load network with finite dc-feed inductance. To further extend the operation frequency up to millimeter-wave band with high efficiency, the core transistor is operated in the saturated region with overdriven condition to obtain the bifurcated current waveform. The proposed power oscillator is fabricated using a 0.15- μ m GaAs pseudomorphic high-electron mobility transistor process, and it features a tuning range from 23.5 to 24.5 GHz, a peak efficiency of 19%, a maximum output power of 21 dBm, and a phase noise of -106.3 dBc/Hz at 1-MHz offset.

KW - GaAs

KW - MMIC

KW - PHEMT

KW - high efficiency

KW - low phase noise oscillators

UR - http://www.scopus.com/inward/record.url?scp=85007028898&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2016.2629978

DO - 10.1109/LMWC.2016.2629978

M3 - 期刊論文

AN - SCOPUS:85007028898

SN - 1531-1309

VL - 27

SP - 55

EP - 57

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 1

M1 - 7792653

ER -

A K -Band High Efficiency High Power Monolithic GaAs Power Oscillator Using Class-E Network

Abstract

Keywords

Access to Document

Fingerprint

Cite this