This letter presents design of a K-band high power high efficiency monolithic GaAs power oscillators using class-E load network with finite dc-feed inductance. To further extend the operation frequency up to millimeter-wave band with high efficiency, the core transistor is operated in the saturated region with overdriven condition to obtain the bifurcated current waveform. The proposed power oscillator is fabricated using a 0.15- μ m GaAs pseudomorphic high-electron mobility transistor process, and it features a tuning range from 23.5 to 24.5 GHz, a peak efficiency of 19%, a maximum output power of 21 dBm, and a phase noise of -106.3 dBc/Hz at 1-MHz offset.
|Number of pages||3|
|Journal||IEEE Microwave and Wireless Components Letters|
|State||Published - Jan 2017|
- high efficiency
- low phase noise oscillators