@inproceedings{2cce17e15f9d47c2b6fa1ede6c0954a1,
title = "A K-band high efficiency high output power CG-CS frequency doubler in 0.5-m GaAs E/D-mode PHEMT process",
abstract = "A K-band high efficiency high output power frequency doubler in a 0.5-μm GaAs enhancement- and depletion-mode pseudomorphic high electron-mobility transistor (E/D-mode PHEMT) technology is presented in this paper. The doubler employs a configuration of a common-gate (CG) field effect transistor (FET) /common-source (CS) FET pair to enhance the second harmonic efficiently. Between 21 and 28 GHz, this doubler features a conversion gain of higher than 1.5 dB with an input power of 8 dBm. The maximum conversion gain is 1.9 dB at 26 GHz with an efficiency of up to 23.2% and a power-added efficiency (PAE) of 9.6 %. The maximum output 1-dB compression point (P 1dB) is 10.4 dBm and the saturation output power (P sat) is higher than 11.4 dBm at 24 GHz. The overall chip size is 1×1 mm 2. To the best of the author's knowledge, this work demonstrates the highest efficiency with high output power among all the fully integrated doublers covering the K-band without buffer amplifiers.",
keywords = "K-band, frequency doubler, high efficiency",
author = "Weng, {Shou Hsien} and Chen, {Guan Yu} and Chang, {Hong Yeh} and Hsin, {Yue Ming}",
year = "2011",
language = "???core.languages.en_GB???",
isbn = "9780858259744",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "1258--1261",
booktitle = "Asia-Pacific Microwave Conference Proceedings, APMC 2011",
note = "Asia-Pacific Microwave Conference, APMC 2011 ; Conference date: 05-12-2011 Through 08-12-2011",
}