A K-band high efficiency high output power CG-CS frequency doubler in 0.5-m GaAs E/D-mode PHEMT process

Shou Hsien Weng, Guan Yu Chen, Hong Yeh Chang, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations


A K-band high efficiency high output power frequency doubler in a 0.5-μm GaAs enhancement- and depletion-mode pseudomorphic high electron-mobility transistor (E/D-mode PHEMT) technology is presented in this paper. The doubler employs a configuration of a common-gate (CG) field effect transistor (FET) /common-source (CS) FET pair to enhance the second harmonic efficiently. Between 21 and 28 GHz, this doubler features a conversion gain of higher than 1.5 dB with an input power of 8 dBm. The maximum conversion gain is 1.9 dB at 26 GHz with an efficiency of up to 23.2% and a power-added efficiency (PAE) of 9.6 %. The maximum output 1-dB compression point (P 1dB) is 10.4 dBm and the saturation output power (P sat) is higher than 11.4 dBm at 24 GHz. The overall chip size is 1×1 mm 2. To the best of the author's knowledge, this work demonstrates the highest efficiency with high output power among all the fully integrated doublers covering the K-band without buffer amplifiers.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC 2011
Number of pages4
StatePublished - 2011
EventAsia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia
Duration: 5 Dec 20118 Dec 2011

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC


ConferenceAsia-Pacific Microwave Conference, APMC 2011
CityMelbourne, VIC


  • frequency doubler
  • high efficiency
  • K-band


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