A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis

Kuan Hsueh Lu; Jyun Jia Huang; Wei Cheng Chen; Hong Yeh Chang; Yu Chi Wang

doi:10.1109/RFIT.2018.8524108

A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis

Kuan Hsueh Lu, Jyun Jia Huang, Wei Cheng Chen, Hong Yeh Chang, Yu Chi Wang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

In this paper, we present a K-band frequency doubler using 0.15-μ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is 0.9 × 0.8m^2. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.

Original language	English
Title of host publication	2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538659717
DOIs	https://doi.org/10.1109/RFIT.2018.8524108
State	Published - 5 Nov 2018
Event	2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 - Melbourne, Australia Duration: 15 Aug 2018 → 17 Aug 2018

Publication series

Name	2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018

Conference

Conference	2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
Country/Territory	Australia
City	Melbourne
Period	15/08/18 → 17/08/18

Keywords

E-mode
GaAs
Gm-boosted technique
MMIC
frequency doubler
microwave and MMW
pHEMT

Access to Document

10.1109/RFIT.2018.8524108

Development of High Performance Frontend Integrated Circuits for Microwave and Millimeter-Wave Measurement Instruments(3/3)
Chang, H.-Y. (PI)
1/08/18 → 31/10/19
Project: Research
Research on W-Band Radar Frontend Integrated Circuits for Miniature Unmanned Aerial Vehicle Applications(2/3)
Chang, H.-Y. (PI)
1/08/18 → 31/07/19
Project: Research

Cite this

Lu, K. H., Huang, J. J., Chen, W. C., Chang, H. Y., & Wang, Y. C. (2018). A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. In 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 Article 8524108 (2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2018.8524108

Lu, Kuan Hsueh ; Huang, Jyun Jia ; Chen, Wei Cheng et al. / A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018).

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abstract = "In this paper, we present a K-band frequency doubler using 0.15-μ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is 0.9 × 0.8m^2. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.",

keywords = "E-mode, GaAs, Gm-boosted technique, MMIC, frequency doubler, microwave and MMW, pHEMT",

author = "Lu, {Kuan Hsueh} and Huang, {Jyun Jia} and Chen, {Wei Cheng} and Chang, {Hong Yeh} and Wang, {Yu Chi}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 ; Conference date: 15-08-2018 Through 17-08-2018",

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Lu, KH, Huang, JJ, Chen, WC, Chang, HY & Wang, YC 2018, A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. in 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018., 8524108, 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018, Melbourne, Australia, 15/08/18. https://doi.org/10.1109/RFIT.2018.8524108

A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. / Lu, Kuan Hsueh; Huang, Jyun Jia; Chen, Wei Cheng et al.
2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8524108 (2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chen, Wei Cheng

AU - Chang, Hong Yeh

AU - Wang, Yu Chi

PY - 2018/11/5

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N2 - In this paper, we present a K-band frequency doubler using 0.15-μ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is 0.9 × 0.8m^2. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.

AB - In this paper, we present a K-band frequency doubler using 0.15-μ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is 0.9 × 0.8m^2. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.

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KW - GaAs

KW - Gm-boosted technique

KW - MMIC

KW - frequency doubler

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PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 15 August 2018 through 17 August 2018

ER -

Lu KH, Huang JJ, Chen WC, Chang HY, Wang YC. A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. In 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8524108. (2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018). doi: 10.1109/RFIT.2018.8524108

A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis

Abstract

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Keywords

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Projects

Development of High Performance Frontend Integrated Circuits for Microwave and Millimeter-Wave Measurement Instruments(3/3)

Research on W-Band Radar Frontend Integrated Circuits for Miniature Unmanned Aerial Vehicle Applications(2/3)

Cite this