A K-band 24.1% PAE Wideband Unilateralized CMOS Power Amplifier Using Differential Transmission-Line Transformers in 0.18- μm CMOS

Po Hsun Chen, Hwann Kaeo Chiou, Yuan Chang Wang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

This letter presents a K-band CMOS power amplifier that adopted a unilateralized technique to mitigate the intrinsic gate-drain feedback effect of the transistor for increasing the reverse isolation and power gain. This three-differential-stage amplifier used low-loss transmission-line transformers (TLTs) for the input/output impedance matching networks and the transformers (TFs) for the inter-stage coupling. The obtained 3-dB bandwidth is from 18.8 to 23.3 GHz with better than 58-dB reverse isolation. The amplifier achieves a power gain of 26.2 dB, a saturation output power of 20.3 dBm, an output 1-dB gain compression point of 17.2 dBm and power added efficiency (PAE) of 24.1% under a power consumption of 440 mW. The chip size is 1.12 mm2 including all pads.

Original languageEnglish
Article number7605513
Pages (from-to)924-926
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume26
Issue number11
DOIs
StatePublished - Nov 2016

Keywords

  • CMOS differential power amplifier
  • transmission line transformer
  • unilateralization

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