A high-speed current mode sense amplifier for Spin-Torque Transfer Magnetic Random Access Memory

Chia Tsung Cheng, Yu Chang Tsai, Kuo Hsing Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations

Abstract

A high-speed current mode sense amplifier for Spin Torque Transfer Magnetic Random Access Memory (STT MRAM) is proposed. The sense amplifier is designed in a 0.18 μm CMOS technology, and 1.8 V supply voltage. The resistance values of high state is 2132 Ω, low state is 1215 Ω, and reference state is 1512 Ω, respectively. The proposed sense amplifier decreases the dropping rate of input bias. In particular, it can reduce the sensing time and the power-delay-product (PDP). In addition, the proposed sense amplifier has higher driving ability.

Original languageEnglish
Title of host publication2010 IEEE International 53rd Midwest Symposium on Circuits and Systems, MWSCAS 2010
Pages181-184
Number of pages4
DOIs
StatePublished - 2010
Event53rd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2010 - Seattle, WA, United States
Duration: 1 Aug 20104 Aug 2010

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746

Conference

Conference53rd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2010
Country/TerritoryUnited States
CitySeattle, WA
Period1/08/104/08/10

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