A high-speed and high-responsivity photodiode in standard CMOS technology

Wei Kuo Huang, Yu Chang Liu, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


This work investigates a new silicon (Si) photodiode (PD) by standard complementary metal-oxide-semiconductor (CMOS) process. The basic structure of the proposed Si PD is formed by multiple p-n diodes with shallow trench isolation oxide in between p- and n-region from Taiwan Semiconductor Manufacturing Company 0.18-μm CMOS technology. The proposed PD demonstrates a responsivity of 0.37 A/W at zero bias (λ 823 nm). At reverse bias (VR) of 14.3 V, the fabricated PD exhibits a high responsivity of 0.74 A/W, a - 3-dB electrical bandwidth of 1.6 GHz, and an eye diagram at 3.5 Gb/s.

Original languageEnglish
Pages (from-to)197-199
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number4
StatePublished - 15 Feb 2007


  • Complementary metal-oxide-semiconductor (CMOS)
  • Photodiode (PD)
  • Silicon (Si)


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