A high performance V-band low noise amplifier using thin-film microstrip (TFMS) lines in 0.13 μm CMOS technology

Hwann Kaeo Chiou, Kuan Zung Lee, Shang Ju Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

A 60 GHz low noise amplifier (LNA) in standard 0.13 m CMOS process is demonstrated. A shunted inductor is applied to resonate out the parasitic capacitor at the drain node of the first common source stage which effectively reduce the NF and enhance gain. This thin-film microstrip LNA achieves a measured power gain of 15.8 dB, a noise figure of 5.71 dB, an output 1-dB compression point (OP1dB) of 1.13 dBm, and an input third-order inter-modulation point (IIP3) of 4.8 dBm at 60 GHz. The chip area with pads is 0.42 mm 2 and the power consumption is 43.3 mW.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Pages1513-1516
Number of pages4
StatePublished - 2010
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: 7 Dec 201010 Dec 2010

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2010 Asia-Pacific Microwave Conference, APMC 2010
Country/TerritoryJapan
CityYokohama
Period7/12/1010/12/10

Keywords

  • CMOS
  • Low noise amplifier (LNA)
  • microstrip (TFMS)
  • millimeter-wave
  • thin-film
  • V-band

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