This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 μm enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P1 dB); of higher than 27 dBm.
- Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT)
- high efficiency
- power amplifier (PA)
- reactance compensation