A high efficiency broadband class-E power amplifier using a reactance compensation technique

Chi Hsien Lin, Hong Yeh Chang

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 μm enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P1 dB); of higher than 27 dBm.

Original languageEnglish
Article number5545480
Pages (from-to)507-509
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume20
Issue number9
DOIs
StatePublished - Sep 2010

Keywords

  • Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT)
  • high efficiency
  • power amplifier (PA)
  • reactance compensation

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