A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate

Chao Wei Lin, Hsien Chin Chiu, Jeffrey S. Fu, Geng Yen Lee, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The thermal stability and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrates with a 2 μm-thick copper interconnection (Cu-INTC) metal were evaluated. The use of metallic copper as a conducting metal has the advantages of higher thermal conductivity, low cost and low sheet resistance. For comparison, traditional gold metal interconnection (Au-INTC) devices were fabricated under the same process conditions. Thermal infrared (IR) microscopy measurements show that the Cu-INTC devices achieved a lower channel temperature (TCHANNEL) than traditional Au-INTC devices with the identical drain current density. It is owing to its low metal resistivity. The typical peak transconductance (gm), output power (POUT), power gain (Gp) and power-added-efficiency (PAE) at 100 °C operation were 87.53 mS/mm, 22.85 dBm, 11.1 dB and 25.9 % for 1 mm gate width Cu-INTC power device and these measured results were better than those of Au-INTC devices. These measured results indicated that the copper metal provides a highly potential for high-power AlGaN/GaN HEMT applications.

Original languageEnglish
Title of host publication2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
StatePublished - 2012
Event27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 - Boston, MA, United States
Duration: 23 Apr 201226 Apr 2012

Publication series

Name2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

Conference

Conference27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
Country/TerritoryUnited States
CityBoston, MA
Period23/04/1226/04/12

Keywords

  • AlGaN/GaN
  • Copper metal
  • HEMTs
  • Thermal stability

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