A fully integrated power amplifier with switched output network in GaAs HBT-HEMT process

Chih Chun Shen, Hong Yeh Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper describes a fully integrated power amplifier (PA) with switched output network in 2 μm / 0.5 μm GaAs HBT-HEMT (BiFET) process. The proposed PA is designed using both HBT and PHEMT. The HBT is adopted for the PA and the bias circuit, while the PHEMT is adopted for the switched output network. By using the proposed method, the switchable PA demonstrates a power added efficiency (PAE) improvement of more than 20% at the low-power region. With dynamic current biasing (DCB) technique, the proposed PA can be operated both in high- and low-power mode with good PAE. At 2 GHz, the PA features an output P 1dB of 21.6 dBm, a peak PAE of 36.5% for the high-power mode, and a peak PAE of 33.8% with a output P 1dB of 7.9 dBm for the low-power mode.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2011
Subtitle of host publication"Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
Pages208-211
Number of pages4
StatePublished - 2011
Event14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - Manchester, United Kingdom
Duration: 10 Oct 201111 Oct 2011

Publication series

NameEuropean Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011

Conference

Conference14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
Country/TerritoryUnited Kingdom
CityManchester
Period10/10/1111/10/11

Keywords

  • BiFET
  • GaAs
  • HBT
  • linearity
  • PAE
  • PHEMT
  • power amplifier
  • switch

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