A fully integrated 2.4-GHz 0.5-W high efficiency class-E voltage controlled oscillator in 0.15-μm PHEMT process

Chi Hsien Lin, Wen Ping Li, Hong Yeh Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

This paper describes a fully integrated 2.4-GHz 0.5-W high efficiency class-E voltage controlled oscillator (VCO) in 0.15-m GaAs pseudomorphic high-electron mobility transistor (PHEMT) process. The proposed power VCO is based on a class-E topology with a π-feedback network. The proposed class-E power VCO achieves an output power of 27 dBm with an efficiency of 42.5%, when the dc supply voltage is 6 V with a current consumption of 196 mA. The phase noise is 118.33 dBc/Hz at 1-MHz offset. The frequency tuning range with various dc supply voltage is from 2.29 to 2.45 GHz. The chip size of the class-E power VCO is 2×2 mm 2. This work has the highest efficiency among the reported fully integrated power oscillators using HEMT technologies.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC 2011
Pages864-867
Number of pages4
StatePublished - 2011
EventAsia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia
Duration: 5 Dec 20118 Dec 2011

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

ConferenceAsia-Pacific Microwave Conference, APMC 2011
Country/TerritoryAustralia
CityMelbourne, VIC
Period5/12/118/12/11

Keywords

  • class-E
  • efficiency
  • monolithic microwave integrated circuit (MMIC)
  • oscillator
  • phase noise
  • pseudomorphic high-electron mobility transistor (PHEMT)

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