A full X-band power amplifier with an integrated guanella-type transformer and a predistortion linearizer in 0.18-μM CMOS

Hua Yen Chung; Chin Wei Kuo; Hwann Kaeo Chiou

doi:10.1002/mop.27804

A full X-band power amplifier with an integrated guanella-type transformer and a predistortion linearizer in 0.18-μM CMOS

Hua Yen Chung, Chin Wei Kuo, Hwann Kaeo Chiou

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A full X-band push-pull power amplifier (PA) with predistortion linearizer is developed in tsmc™ 0.18-μm CMOS technology. The broadband performance is achieved by using transformers including a differential Guanella-type transmission line transformer and two magnetically coupled transformers. The linearity of PA is enhanced by feedback topology and the use of predistortion linearizer. Over full X-band from 8 to 12 GHz, the saturated power and maximum power-added efficiency are higher than 21.3 dBm and 16.19%, respectively. The performances of output power at 1-dB compression point and power-added efficiency (PAE) at P_1dB are significantly improved by an output power of 2.2 dBm and a PAE of 12.1%, which contributes to power back-off operation for the application of linear modulation. The chip area, including pads, is 1.05 mm².

Original language	English
Pages (from-to)	2229-2232
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	55
Issue number	9
DOIs	https://doi.org/10.1002/mop.27804
State	Published - Sep 2013

Keywords

CMOS
Guanella-type
PA
predistortion
transformer

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10.1002/mop.27804

Cite this

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title = "A full X-band power amplifier with an integrated guanella-type transformer and a predistortion linearizer in 0.18-μM CMOS",

abstract = "A full X-band push-pull power amplifier (PA) with predistortion linearizer is developed in tsmc{\texttrademark} 0.18-μm CMOS technology. The broadband performance is achieved by using transformers including a differential Guanella-type transmission line transformer and two magnetically coupled transformers. The linearity of PA is enhanced by feedback topology and the use of predistortion linearizer. Over full X-band from 8 to 12 GHz, the saturated power and maximum power-added efficiency are higher than 21.3 dBm and 16.19%, respectively. The performances of output power at 1-dB compression point and power-added efficiency (PAE) at P1dB are significantly improved by an output power of 2.2 dBm and a PAE of 12.1%, which contributes to power back-off operation for the application of linear modulation. The chip area, including pads, is 1.05 mm2.",

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AB - A full X-band push-pull power amplifier (PA) with predistortion linearizer is developed in tsmc™ 0.18-μm CMOS technology. The broadband performance is achieved by using transformers including a differential Guanella-type transmission line transformer and two magnetically coupled transformers. The linearity of PA is enhanced by feedback topology and the use of predistortion linearizer. Over full X-band from 8 to 12 GHz, the saturated power and maximum power-added efficiency are higher than 21.3 dBm and 16.19%, respectively. The performances of output power at 1-dB compression point and power-added efficiency (PAE) at P1dB are significantly improved by an output power of 2.2 dBm and a PAE of 12.1%, which contributes to power back-off operation for the application of linear modulation. The chip area, including pads, is 1.05 mm2.

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A full X-band power amplifier with an integrated guanella-type transformer and a predistortion linearizer in 0.18-μM CMOS

Abstract

Keywords

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