A FORMing-Free HfO₂-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory with 3-Bit-Per-Cell Storage Capability

E. R. Hsieh, K. T. Chen, P. Y. Chen, S. S. Wong, S. S. Chung

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

1 results

Finished
Developments and Applications of AI chip by Neuromorphic Computing: Construction of General Neuron-Network Technology Platform and Hetero-Integration of AI Chip in Recognition of Images(1/3)
Hsieh, E.-R. (PI)
1/02/20 → 31/01/21
Project: Research