A FORMing-Free HfO₂-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory with 3-Bit-Per-Cell Storage Capability

Keyphrases

• Gate Metal 100%
• MOSFET 100%
• Non-volatile Memory 100%
• Resistive Gate 100%
• HfO2 100%
• 3-bits 100%
• Cell Storage 100%
• Storage Capability 100%
• Hafnium Oxynitride 100%
• Metal-dielectric 70%
• Drain Current 30%
• Top Electrode 30%
• Bottom Electrode 20%
• Resistance Value 20%
• Dielectric Layer 20%
• Electrode Metal 20%
• Non-volatile 10%
• Gate Dielectric 10%
• Threshold Voltage 10%
• External Voltage 10%
• Metal Cans 10%
• Resistance Switching 10%
• Resistance to Change 10%
• Low Resistance State 10%
• High Resistance State 10%
• Endurance Cycle 10%
• Retention Test 10%
• Pulsed Operation 10%
• Hafnium Oxide 10%
• Fowler-Nordheim 10%
• Bipolar Operation 10%
• Switching Layer 10%

Engineering

• Resistive 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Nonvolatile Memory 100%
• Dielectrics 70%
• Current Drain 30%
• Dielectric Layer 20%
• Applied Voltage 10%
• Gate Dielectric 10%
• Resistance Change 10%
• High Resistance State 10%
• Bipolar Operation 10%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxynitride 100%
• Hafnium 100%
• Dielectric Material 100%