A F-band two-element phased-array receiver using reflection-Type vector modulator in 90-nm CMOS technology

Chi Hsien Lin, Hsuan Yin Huang, Yi En Shen, Tsung Hsien Lin, Hong Yeh Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper describes a K-band 2-element phase-array receiver in 90 nm CMOS process. The receiver consists of two low noise amplifiers (LNAs), two vector modulators, and a down-converter mixer. The vector modulators are designed using a modified reflection-type in- and quadrature-phase modulator for amplitude and phase control. At 66 GHz, the measured small-signal gain of LNA is 24 dB with a noise figure of 6.9 dB. The measured small-signal gains of the LNA with the vector modulator for the four phase states are higher than 5 dB between 64 and 67 GHz. The measured conversion gain of mixer is 6.7 dB. The measured minimum phase and amplitude errors are 4.8 and 1 dB, respectively. The chip size is 1.45×0.95 mm2.

Original languageEnglish
Title of host publication2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015
EditorsFan Meng, Wei Hong, Guang-Qi Yang, Zhe Song, Xiao-Wei Zhu
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479987658
DOIs
StatePublished - 2015
Event2015 Asia-Pacific Microwave Conference, APMC 2015 - Nanjing, China
Duration: 6 Dec 20159 Dec 2015

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume3

Conference

Conference2015 Asia-Pacific Microwave Conference, APMC 2015
Country/TerritoryChina
CityNanjing
Period6/12/159/12/15

Keywords

  • CMOS
  • K-band
  • LNA
  • microwave
  • MMW
  • phase array
  • vector modulator

Fingerprint

Dive into the research topics of 'A F-band two-element phased-array receiver using reflection-Type vector modulator in 90-nm CMOS technology'. Together they form a unique fingerprint.

Cite this