A Dual-gate subharmonic injection-locked oscillator using 0.5 μm GaAs pHEMT technology

Fan Hsiu Huang, Meng Hsiu Tsai, Hong Yeh Chang, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


A dual-gate subharmonic injection-locked oscillator (SILO) designed for Q-band millimeter-wave applications has been implemented in 0.5 μm GaAs pHEMT process. Based on the dual-gate circuit topology, a wide-bandwidth and high-frequency negative resistance can be easily obtained for determining the free-running oscillation frequency by a proper resonator. The free-running frequency is designed around 49 GHz. The power consumption is 75 mW from a 5 V supply. The measured frequency tuning range is from 48.7 GHz to 49.7 GHz with 8 dBm output power. By injecting a 2nd-order subharmonic signal into the oscillator without any frequency tuning, the maximum locking range can reach to be 2.8 GHz. The measured output phase noise under locking status is close to 121 dBc/Hz at 1-MHz offset frequency.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Number of pages4
StatePublished - 2010
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: 7 Dec 201010 Dec 2010

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC


Conference2010 Asia-Pacific Microwave Conference, APMC 2010


  • Dual-gate
  • enhanced/depletion-mode HEMT
  • injection locked oscillator
  • subharmonic injection locking


Dive into the research topics of 'A Dual-gate subharmonic injection-locked oscillator using 0.5 μm GaAs pHEMT technology'. Together they form a unique fingerprint.

Cite this