A dual-band millimeter-wave high-gain dielectric resonator antenna using vertical assembly technology

Ta Yeh Lin, Tsenchieh Chiu, Yin Cheng Chang, Da Chiang Chang, Mao Hsu Yen, Chiu Kuo Chen, Ming Shan Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

A dual-band millimeter-wave (mmW) dielectric resonator antenna (DRA) in silicon based integrated passive device (IPD) technology for unlicensed V-band (57-64 GHz) and E-band (71-86 GHz) applications is proposed in this paper. In the proposed structure, dielectric resonator (DR) was fed by using vertical coupling feed architecture to improve the antenna efficiency and gains. The simulated results show that the antenna can operate in V-band and E-band, and the impedance bandwidths with |S11| less than -10 dB are from 57.6 to 62.1 GHz and from 77.1 to 81.2 GHz, respectively. The simulated gains are 5.1 dBi at 60 GHz and 5.9 dBi at 80 GHz, respectively. The proposed antenna is well suited for dual-band millimeter-wave high-gain wireless communication systems.

Original languageEnglish
Title of host publication2017 IEEE CPMT Symposium Japan, ICSJ 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages131-132
Number of pages2
ISBN (Electronic)9781538627129
DOIs
StatePublished - 26 Dec 2017
Event2017 IEEE CPMT Symposium Japan, ICSJ 2017 - Kyoto, Japan
Duration: 20 Nov 201722 Nov 2017

Publication series

Name2017 IEEE CPMT Symposium Japan, ICSJ 2017
Volume2017-January

Conference

Conference2017 IEEE CPMT Symposium Japan, ICSJ 2017
Country/TerritoryJapan
CityKyoto
Period20/11/1722/11/17

Keywords

  • 60-GHz
  • IPD technology
  • dielectric resonator antenna (DRA)
  • millimeter-wave (mmW)
  • on-chip antenna

Fingerprint

Dive into the research topics of 'A dual-band millimeter-wave high-gain dielectric resonator antenna using vertical assembly technology'. Together they form a unique fingerprint.

Cite this