@inproceedings{086e0fef88c648cdbbfa32db31013f14,
title = "A comprehensive study of polymorphic phase distribution of ferroelectric-dielectrics and interfacial layer effects on negative capacitance FETs for Sub-5 nm node",
abstract = "The impact of a realistic representation of gate-oxide granularity on negative-capacitance (NC) FETs at sub-5nm node is studied by a newly developed thermodynamic energy model based on the first principle calculation (FPC). For the first time, the calculation fully couples the Landau-Khalatnikov (L-K) equation with grain-size effect equation in NC-FETs. It explains the experimental results in phase transition and reveals excellent immunity against depolarization in ferroelectric (FE) layer owing to dopant concentration and stress in thin films. A sub-5nm node (LG=10nm) NC-FET with thin FE layer (TFE∼2nm) is integrated to achieve low subthreshold slope (SS) of 52mV/dec via a 1.9GPa-tensor stressed interfacial layer (IL) and 12% Zr-doped HfO2.",
author = "Tang, {Y. T.} and Su, {C. J.} and Wang, {Y. S.} and Kao, {K. H.} and Wu, {T. L.} and Sung, {P. J.} and Hou, {F. J.} and Wang, {C. J.} and Yeh, {M. S.} and Lee, {Y. J.} and Wu, {W. F.} and Huang, {G. W.} and Shieh, {J. M.} and Yeh, {W. K.} and Wang, {Y. H.}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 ; Conference date: 18-06-2018 Through 22-06-2018",
year = "2018",
month = oct,
day = "25",
doi = "10.1109/VLSIT.2018.8510696",
language = "???core.languages.en_GB???",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "45--46",
booktitle = "2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018",
}