A comparative study of the passivation films on algaas/gaas heterojunction diodes and bipolar transistors

H. P. Hwang; J. L. Shieh; Y. S. Cheng; J. I. Chyi

doi:10.1109/16.902714

A comparative study of the passivation films on algaas/gaas heterojunction diodes and bipolar transistors

H. P. Hwang, J. L. Shieh, Y. S. Cheng, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiO_x and SiN_x, was investigated in terms of the electrical characteristics of GaAs/Al_0.3Ga_0.7 As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials.

Original language	English
Pages (from-to)	185-189
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	2
DOIs	https://doi.org/10.1109/16.902714
State	Published - 2001

Keywords

Hbts
Passivation
Thermal conductivity

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10.1109/16.902714

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title = "A comparative study of the passivation films on algaas/gaas heterojunction diodes and bipolar transistors",

abstract = "A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiOx and SiNx, was investigated in terms of the electrical characteristics of GaAs/Al0.3Ga0.7 As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials.",

keywords = "Hbts, Passivation, Thermal conductivity",

author = "Hwang, {H. P.} and Shieh, {J. L.} and Cheng, {Y. S.} and Chyi, {J. I.}",

note = "Funding Information: Manuscript received October 12, 1999. This work was supported in part by the National Science Council, R.O.C., under Contract NSC 85-2221-E008-018. The review of this paper was arranged by Editor M. F. Chang.",

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AU - Hwang, H. P.

AU - Shieh, J. L.

AU - Cheng, Y. S.

AU - Chyi, J. I.

N1 - Funding Information: Manuscript received October 12, 1999. This work was supported in part by the National Science Council, R.O.C., under Contract NSC 85-2221-E008-018. The review of this paper was arranged by Editor M. F. Chang.

PY - 2001

Y1 - 2001

N2 - A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiOx and SiNx, was investigated in terms of the electrical characteristics of GaAs/Al0.3Ga0.7 As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials.

AB - A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiOx and SiNx, was investigated in terms of the electrical characteristics of GaAs/Al0.3Ga0.7 As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials.

KW - Hbts

KW - Passivation

KW - Thermal conductivity

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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A comparative study of the passivation films on algaas/gaas heterojunction diodes and bipolar transistors

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Keywords

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