Abstract
A compact band selection filter (BSF) is implemented in a 0.18-μm CMOS technology. The structure consists of a pair of symmetric slow wave anti-coupled line and a shunted transistor. When the transistor is in the off-state, the BSF can work as a low-pass filter. The measured insertion loss is 3 dB, and the return loss is better than 9 dB from DC to 10GHz. When the transistor is in the on-state, the BSF can work as a bandpass filter. The measured insertion loss is 3 dB, and the return loss is better than 10 dB from 14 to 27 GHz.
Original language | English |
---|---|
Pages (from-to) | 1166-1171 |
Number of pages | 6 |
Journal | IEICE Electronics Express |
Volume | 9 |
Issue number | 14 |
DOIs | |
State | Published - 2012 |
Keywords
- Band selection filter
- Bandpass filter
- CMOS
- Lowpass filter