Keyphrases
Heterojunction Bipolar Transistors
100%
P-type Doping
100%
Buried Layer
100%
AlGaAs
40%
GaAs HBT
40%
Current Confinement
40%
High Efficiency
20%
Current Gain
20%
Heterojunction
20%
Metal-organic Chemical Vapor Deposition (MOCVD)
20%
Common-emitter
20%
Device Simulator
20%
I-V Characteristics
20%
Regrowth
20%
Small EVs
20%
Two Dimensional Devices
20%
Engineering
Heterojunctions
100%
Bipolar Transistor
100%
Gallium Arsenide
66%
Aluminium Gallium Arsenide
66%
Current-Voltage Characteristic
33%
Current Gain
33%
Two Dimensional
33%
Chemical Vapor Deposition
33%
Vapor Deposition
33%
Systematic Analysis
33%
Earth and Planetary Sciences
Heterojunctions
100%
Emitter
100%
Bipolar Transistor
100%
Aluminum Gallium Arsenide
66%
Metalorganic Chemical Vapor Deposition
33%
Regrowth
33%
Material Science
Heterojunction
100%
Bipolar Transistor
100%
Gallium Arsenide
66%
Aluminium Gallium Arsenide
66%
Current-Voltage Characteristic
33%
Chemical Vapor Deposition
33%
Physics
Bipolar Transistor
100%
Heterojunctions
100%
Regrowth
33%
Metalorganic Chemical Vapor Deposition
33%