A carrier escape study from InAs self-assembled quantum dots by photocurrent measurement

Keyphrases

• Self-assembled Quantum Dots 100%
• Photocurrent Measurements 100%
• Carrier Escape 100%
• Gallium Arsenide 50%
• Temperature Effect 50%
• Photocurrent 50%
• Photoluminescence Measurements 50%
• Wetting Layer 50%
• Intermediate State 50%
• Temperature-dependent Photoluminescence 50%
• Photoexcited Carriers 50%
• Escape Mechanism 50%
• Size Selectivity 50%
• Tunneling Effect 50%
• Carrier Redistribution 50%
• Hole Tunneling 50%
• Redistribution Effect 50%
• Thermally Assisted 50%

Material Science

• Quantum Dot 100%
• Photoluminescence 50%
• Gallium Arsenide 50%