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Abstract
Three-dimensional (3D) dynamic random access memory (DRAM) using through-silicon-via (TSV) has been proposed to overcome the memory wall. WideIO DRAM is one type of 3D DRAMs. IOs of a WideIO DRAM die are wrapped by a 1149. 1-like boundary scan controlled by a scan controller. In this paper, we propose a built-in-self-Test (BIST) scheme for the post-bond testing of TSVs of a logic-DRAM stack. The BIST circuit implemented in the logic die can generate control signals for the scan controller and test patterns for the testing of TSVs.
Original language | English |
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Title of host publication | IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781728148700 |
DOIs | |
State | Published - Oct 2019 |
Event | 2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan Duration: 8 Oct 2019 → 10 Oct 2019 |
Publication series
Name | IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 |
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Conference
Conference | 2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 |
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Country/Territory | Japan |
City | Sendai |
Period | 8/10/19 → 10/10/19 |
Keywords
- 3D IC
- built-in self-Test
- DRAM die
- TSV
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Dive into the research topics of 'A Built-in Self-Test Scheme for TSVs of Logic-DRAM Stacked 3D ICs'. Together they form a unique fingerprint.Projects
- 1 Finished
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Robustness and Reliability Enhancement Techniques for Deep Neural Network Systems(1/3)
Li, J.-F. (PI)
1/08/19 → 31/07/20
Project: Research