Abstract
An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 μm AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental rejection of better than 13 dB over the operation bandwidth. The output 1 dB compression point (P1 dB) and the saturation output power (Psat) are higher than 7.3 and 10 dBm, respectively. This work presents the highest figure-of-merit (FOM) of 25.14 as compared to other previously reported broadband doublers.
Original language | English |
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Article number | 5427078 |
Pages (from-to) | 226-228 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 20 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2010 |
Keywords
- Broadband
- Distributed
- Enhancement-mode (E-Mode)
- Frequency doubler
- PHEMT