A broadband high efficiency high output power frequency doubler

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An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 μm AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental rejection of better than 13 dB over the operation bandwidth. The output 1 dB compression point (P1 dB) and the saturation output power (Psat) are higher than 7.3 and 10 dBm, respectively. This work presents the highest figure-of-merit (FOM) of 25.14 as compared to other previously reported broadband doublers.

Original languageEnglish
Article number5427078
Pages (from-to)226-228
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number4
StatePublished - Apr 2010


  • Broadband
  • Distributed
  • Enhancement-mode (E-Mode)
  • Frequency doubler


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