A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13-μm CMOS technology

Chin Shen Lin; Pei Si Wu; Hong Yeh Chang; Huei Wang

doi:10.1109/LMWC.2006.873492

A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13-μm CMOS technology

Chin Shen Lin, Pei Si Wu, Hong Yeh Chang, Huei Wang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

106 Scopus citations

Abstract

A broadband microwave/millimeter-wave (MMW) Gilbert-cell mixer using standard 1P8M 0.13-μm complementary metal oxide semiconductor (CMOS) technology is presented in this letter. Two radio frequency (RF) transformer baluns are used in RF- and local oscillator (LO)-ports to convert single-ended signals to differential signals. Thin film microstrip line is employed for the matching networks and transformer design. This mixer has a conversion gain of better than 5 dB from 9 to 50 GHz. Between 5 and 50 GHz, the RF- and LO-to-intermediate frequency (IF) isolations are better than 40 dB. The RF-to-LO and LO-to-RF isolations are all better than 20 dB. To the authors' knowledge, this is the first CMOS Gilbert-cell mixer operating to MMW frequency to date.

Original language	English
Pages (from-to)	293-295
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	16
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2006.873492
State	Published - May 2006

Keywords

Active mixer
Complementary metal oxide semi-conductor (CMOS)
Gilbert cell
Microwave monolithic integrated circuit (MMIC)
Wideband

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10.1109/LMWC.2006.873492

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title = "A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13-μm CMOS technology",

abstract = "A broadband microwave/millimeter-wave (MMW) Gilbert-cell mixer using standard 1P8M 0.13-μm complementary metal oxide semiconductor (CMOS) technology is presented in this letter. Two radio frequency (RF) transformer baluns are used in RF- and local oscillator (LO)-ports to convert single-ended signals to differential signals. Thin film microstrip line is employed for the matching networks and transformer design. This mixer has a conversion gain of better than 5 dB from 9 to 50 GHz. Between 5 and 50 GHz, the RF- and LO-to-intermediate frequency (IF) isolations are better than 40 dB. The RF-to-LO and LO-to-RF isolations are all better than 20 dB. To the authors' knowledge, this is the first CMOS Gilbert-cell mixer operating to MMW frequency to date.",

keywords = "Active mixer, Complementary metal oxide semi-conductor (CMOS), Gilbert cell, Microwave monolithic integrated circuit (MMIC), Wideband",

author = "Lin, {Chin Shen} and Wu, {Pei Si} and Chang, {Hong Yeh} and Huei Wang",

note = "Funding Information: Manuscript received September 9, 2005; revised January 11, 2006 This work was supported in part by the National Science Council of Taiwan, R.O.C. under Contracts NSC 93-2213-E-002-033, NSC 93-2219-E-002-024, and NSC 93-2752-E-002-002-PAE.",

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AU - Wu, Pei Si

AU - Chang, Hong Yeh

AU - Wang, Huei

N1 - Funding Information: Manuscript received September 9, 2005; revised January 11, 2006 This work was supported in part by the National Science Council of Taiwan, R.O.C. under Contracts NSC 93-2213-E-002-033, NSC 93-2219-E-002-024, and NSC 93-2752-E-002-002-PAE.

PY - 2006/5

Y1 - 2006/5

N2 - A broadband microwave/millimeter-wave (MMW) Gilbert-cell mixer using standard 1P8M 0.13-μm complementary metal oxide semiconductor (CMOS) technology is presented in this letter. Two radio frequency (RF) transformer baluns are used in RF- and local oscillator (LO)-ports to convert single-ended signals to differential signals. Thin film microstrip line is employed for the matching networks and transformer design. This mixer has a conversion gain of better than 5 dB from 9 to 50 GHz. Between 5 and 50 GHz, the RF- and LO-to-intermediate frequency (IF) isolations are better than 40 dB. The RF-to-LO and LO-to-RF isolations are all better than 20 dB. To the authors' knowledge, this is the first CMOS Gilbert-cell mixer operating to MMW frequency to date.

AB - A broadband microwave/millimeter-wave (MMW) Gilbert-cell mixer using standard 1P8M 0.13-μm complementary metal oxide semiconductor (CMOS) technology is presented in this letter. Two radio frequency (RF) transformer baluns are used in RF- and local oscillator (LO)-ports to convert single-ended signals to differential signals. Thin film microstrip line is employed for the matching networks and transformer design. This mixer has a conversion gain of better than 5 dB from 9 to 50 GHz. Between 5 and 50 GHz, the RF- and LO-to-intermediate frequency (IF) isolations are better than 40 dB. The RF-to-LO and LO-to-RF isolations are all better than 20 dB. To the authors' knowledge, this is the first CMOS Gilbert-cell mixer operating to MMW frequency to date.

KW - Active mixer

KW - Complementary metal oxide semi-conductor (CMOS)

KW - Gilbert cell

KW - Microwave monolithic integrated circuit (MMIC)

KW - Wideband

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 5

ER -

A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13-μm CMOS technology

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Keywords

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