A 77-GHz MMIC power amplifier for automotive radar applications

Hong Yeh Chang; Huei Wang; Michael Yu; Yonghui Shu

doi:10.1109/LMWC.2003.811059

A 77-GHz MMIC power amplifier for automotive radar applications

Hong Yeh Chang, Huei Wang, Michael Yu, Yonghui Shu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A MMIC 77-GHz two-stage power amplifier (PA) is reported in this letter. This MMIC chip demonstrated a measured small signal gain of over 10 dB from 75 GHz to 80 GHz with 18.5-dBm output power at 1 dB compression. The maximum small signal gain is above 12 dB from 77 to 78 GHz. The saturated output power is better than 21.5 dBm and the maximum power added efficiency is 10% between 75 GHz and 78 GHz. This chip is fabricated using 0.1-μm AlGaAs/InGaAs/GaAs PHEMT MMIC process on 4-mil GaAs substrate. The output power performance is the highest among the reported 4-mil MMIC GaAs HEMT PAs at this frequency and therefore it is suitable for the 77-GHz automotive radar systems and related transmitter applications in W-band.

Original language	English
Pages (from-to)	143-145
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1109/LMWC.2003.811059
State	Published - Apr 2003

Keywords

MMIC
Millimeter wave
PHEMT
Power amplifier

Access to Document

10.1109/LMWC.2003.811059

Cite this

@article{a75115604e5742d390a730006c7a9ad5,

title = "A 77-GHz MMIC power amplifier for automotive radar applications",

abstract = "A MMIC 77-GHz two-stage power amplifier (PA) is reported in this letter. This MMIC chip demonstrated a measured small signal gain of over 10 dB from 75 GHz to 80 GHz with 18.5-dBm output power at 1 dB compression. The maximum small signal gain is above 12 dB from 77 to 78 GHz. The saturated output power is better than 21.5 dBm and the maximum power added efficiency is 10% between 75 GHz and 78 GHz. This chip is fabricated using 0.1-μm AlGaAs/InGaAs/GaAs PHEMT MMIC process on 4-mil GaAs substrate. The output power performance is the highest among the reported 4-mil MMIC GaAs HEMT PAs at this frequency and therefore it is suitable for the 77-GHz automotive radar systems and related transmitter applications in W-band.",

keywords = "MMIC, Millimeter wave, PHEMT, Power amplifier",

author = "Chang, {Hong Yeh} and Huei Wang and Michael Yu and Yonghui Shu",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China ( 41605117 ), the National Key Research and Development Program of China ( 2016YFA0602001 ), and the China Postdoctoral Science Foundation ( 2017M620218 , 2018T110526 ). HC and DKH recognize support from NASA ( 80NSSC18K0689 , NNX16AQ26G ). The GEOS-Chem model is managed by the Atmospheric Chemistry Modeling group at Harvard University with support from the NASA ACMAP program. ",

year = "2003",

month = apr,

doi = "10.1109/LMWC.2003.811059",

language = "???core.languages.en_GB???",

volume = "13",

pages = "143--145",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

number = "4",

}

TY - JOUR

T1 - A 77-GHz MMIC power amplifier for automotive radar applications

AU - Chang, Hong Yeh

AU - Wang, Huei

AU - Yu, Michael

AU - Shu, Yonghui

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China ( 41605117 ), the National Key Research and Development Program of China ( 2016YFA0602001 ), and the China Postdoctoral Science Foundation ( 2017M620218 , 2018T110526 ). HC and DKH recognize support from NASA ( 80NSSC18K0689 , NNX16AQ26G ). The GEOS-Chem model is managed by the Atmospheric Chemistry Modeling group at Harvard University with support from the NASA ACMAP program.

PY - 2003/4

Y1 - 2003/4

N2 - A MMIC 77-GHz two-stage power amplifier (PA) is reported in this letter. This MMIC chip demonstrated a measured small signal gain of over 10 dB from 75 GHz to 80 GHz with 18.5-dBm output power at 1 dB compression. The maximum small signal gain is above 12 dB from 77 to 78 GHz. The saturated output power is better than 21.5 dBm and the maximum power added efficiency is 10% between 75 GHz and 78 GHz. This chip is fabricated using 0.1-μm AlGaAs/InGaAs/GaAs PHEMT MMIC process on 4-mil GaAs substrate. The output power performance is the highest among the reported 4-mil MMIC GaAs HEMT PAs at this frequency and therefore it is suitable for the 77-GHz automotive radar systems and related transmitter applications in W-band.

AB - A MMIC 77-GHz two-stage power amplifier (PA) is reported in this letter. This MMIC chip demonstrated a measured small signal gain of over 10 dB from 75 GHz to 80 GHz with 18.5-dBm output power at 1 dB compression. The maximum small signal gain is above 12 dB from 77 to 78 GHz. The saturated output power is better than 21.5 dBm and the maximum power added efficiency is 10% between 75 GHz and 78 GHz. This chip is fabricated using 0.1-μm AlGaAs/InGaAs/GaAs PHEMT MMIC process on 4-mil GaAs substrate. The output power performance is the highest among the reported 4-mil MMIC GaAs HEMT PAs at this frequency and therefore it is suitable for the 77-GHz automotive radar systems and related transmitter applications in W-band.

KW - MMIC

KW - Millimeter wave

KW - PHEMT

KW - Power amplifier

UR - http://www.scopus.com/inward/record.url?scp=0037399099&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2003.811059

DO - 10.1109/LMWC.2003.811059

M3 - 期刊論文

AN - SCOPUS:0037399099

SN - 1531-1309

VL - 13

SP - 143

EP - 145

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 4

ER -

A 77-GHz MMIC power amplifier for automotive radar applications

Abstract

Keywords

Access to Document

Fingerprint

Cite this