@inproceedings{6eb0db16c01d4cac8192135a2108ef5a,
title = "A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme",
abstract = "A 1-Kb HfO2 based RRAM for high speed nonvolatile memory application is proposed. With this chip, a high speed write characteristic in the RRAM cell can be achieved. The present circuit design includes a 1T1R RRAM (1 transistor/1 resistive memory) cell and a voltage write circuit, which limit the current through the memory cell. The random write time at VDD = 3.3V is as fast as 5 ns in the RRAM, which were fabricated with a 0.18 m TSMC process.",
author = "Sheu, \{Shyh Shyuan\} and Chiang, \{Pei Chia\} and Lin, \{Wen Pin\} and Lee, \{Heng Yuan\} and Chen, \{Pang Shiu\} and Chen, \{Yu Sheng\} and Wu, \{Tai Yuan\} and Chen, \{Frederick T.\} and Su, \{Keng Li\} and Kao, \{Ming Jer\} and Cheng, \{Kuo Hsing\} and Tsai, \{Ming Jinn\}",
year = "2009",
language = "???core.languages.en\_GB???",
isbn = "9784863480018",
series = "IEEE Symposium on VLSI Circuits, Digest of Technical Papers",
pages = "82--83",
booktitle = "2009 Symposium on VLSI Circuits",
note = "2009 Symposium on VLSI Circuits ; Conference date: 16-06-2009 Through 18-06-2009",
}