A 50 ns verify speed in resistive random access memory by using a write resistance tracking circuit

Shyh Shyuan Sheu, Kuo Hsing Cheng, Yu Sheng Chen, Pang Shiu Chen, Ming Jinn Tsai, Yu Lung Lo

Research output: Contribution to journalArticlepeer-review

Abstract

This paper proposes a write resistance tracking circuit (WRTC) to improve the memory window of HfOx-based resistive memory. With a 50-ns single voltage pulse, the minimal resistance of the high resistance state in the 1-kb array of resistive switching elements can increase from 25 kΩ to 65 kΩ by using the proposed verify circuit. The WRTC uses the transition current detection method based on the feedback of the memory cell to control the write driver. The WRTC achieves distinct bistable resistance states, avoids the occurrence of over-RESET, and enhances the memory window of the RRAM cell.

Original languageEnglish
Pages (from-to)1128-1131
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE95-C
Issue number6
DOIs
StatePublished - Jun 2012

Keywords

  • Resistive RAM (RRAM)
  • Verify
  • Write resistance tracking circuit

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