A 38% tuning bandwidth low phase noise differential voltage controlled oscillator using a 0.5 μ e/d-phemt process

Hong Yeh Chang, Yi Shuo Wu, Yu Chi Wang

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14 Scopus citations

Abstract

This paper presents a 38% tuning bandwidth low phase noise differential voltage controlled oscillator (VCO) using a 0.5 mu;enhancement/depletion- pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed VCO is based on a differential topology with two common-gate transistors. To achieve a wide tuning range with low phase noise, varactor in the VCO core employs the E-mode PHEMT device. The frequency of the VCO is from 18.8 to 27.5 GHz with a tuning bandwidth of 38% and an output power of higher than 5 dBm. The VCO demonstrates a phase noise of -109 dBc/Hz at 1 MHz offset frequency. This circuit can be compared with the VCOs fabricated using the advanced InP HBT technologies.

Original languageEnglish
Article number5109481
Pages (from-to)467-469
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume19
Issue number7
DOIs
StatePublished - Jul 2009

Keywords

  • Enhancement/depletion-pseudomorphic high- electron mobility transistor (E/D-PHEMT)
  • Low phase noise
  • Voltage controlled oscillator (VCO)

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