A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology

Hsin Chieh Lin; Da Chiang Chang; Te Hua Fan; Hwann Kaeo Chiou

doi:10.1109/ICSJ59341.2023.10339579

A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology

Hsin Chieh Lin
, Da Chiang Chang
, Te Hua Fan
, Hwann Kaeo Chiou

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range. The power amplifier was manufactured using WIN™ Semiconductors' 0.25-?m Gallium Nitride/Silicon Carbide (GaN/SiC) technology and GaAs IPD technology. The GaN and GaAs IPD chips for the proposed power amplifier were assembled using Chip-on-Board wire-bond assembly technology. The power amplifier exhibited a gain of 18.5 dB, a 3-dB bandwidth from 3.6 GHz to 4.5 GHz, a saturation power of 38.4 dBm, and a peak power-added efficiency of 32.8%. In the context of a 5G NR FR1 256-QAM modulated signal with a 100-MHz bandwidth, the power amplifier demonstrated an average output power of 29.9 dBm under an error vector magnitude 3.5% limitation.

Original language	English
Title of host publication	2023 IEEE CPMT Symposium Japan, ICSJ 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	156-159
Number of pages	4
ISBN (Electronic)	9798350325157
DOIs	https://doi.org/10.1109/ICSJ59341.2023.10339579
State	Published - 2023
Event	12th IEEE CPMT Symposium Japan, ICSJ 2023 - Kyoto, Japan Duration: 15 Nov 2023 → 17 Nov 2023

Publication series

Name	2023 IEEE CPMT Symposium Japan, ICSJ 2023

Conference

Conference	12th IEEE CPMT Symposium Japan, ICSJ 2023
Country/Territory	Japan
City	Kyoto
Period	15/11/23 → 17/11/23

Keywords

Doherty
GaAs
GaN/SiC
IPD
Power Amplifier (PA)

Access to Document

10.1109/ICSJ59341.2023.10339579

Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications(3/3)
Chiou, H.-K. (PI)
1/08/22 → 31/10/23
Project: Research

Cite this

@inproceedings{8d67734e23b54d72a1d07c36d4e88472,

title = "A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology",

abstract = "This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range. The power amplifier was manufactured using WIN{\texttrademark} Semiconductors' 0.25-?m Gallium Nitride/Silicon Carbide (GaN/SiC) technology and GaAs IPD technology. The GaN and GaAs IPD chips for the proposed power amplifier were assembled using Chip-on-Board wire-bond assembly technology. The power amplifier exhibited a gain of 18.5 dB, a 3-dB bandwidth from 3.6 GHz to 4.5 GHz, a saturation power of 38.4 dBm, and a peak power-added efficiency of 32.8\%. In the context of a 5G NR FR1 256-QAM modulated signal with a 100-MHz bandwidth, the power amplifier demonstrated an average output power of 29.9 dBm under an error vector magnitude 3.5\% limitation.",

keywords = "Doherty, GaAs, GaN/SiC, IPD, Power Amplifier (PA)",

author = "Lin, \{Hsin Chieh\} and Chang, \{Da Chiang\} and Fan, \{Te Hua\} and Chiou, \{Hwann Kaeo\}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 12th IEEE CPMT Symposium Japan, ICSJ 2023 ; Conference date: 15-11-2023 Through 17-11-2023",

year = "2023",

doi = "10.1109/ICSJ59341.2023.10339579",

language = "???core.languages.en\_GB???",

series = "2023 IEEE CPMT Symposium Japan, ICSJ 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "156--159",

booktitle = "2023 IEEE CPMT Symposium Japan, ICSJ 2023",

}

Lin, HC, Chang, DC, Fan, TH & Chiou, HK 2023, A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology. in 2023 IEEE CPMT Symposium Japan, ICSJ 2023. 2023 IEEE CPMT Symposium Japan, ICSJ 2023, Institute of Electrical and Electronics Engineers Inc., pp. 156-159, 12th IEEE CPMT Symposium Japan, ICSJ 2023, Kyoto, Japan, 15/11/23. https://doi.org/10.1109/ICSJ59341.2023.10339579

A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology. / Lin, Hsin Chieh; Chang, Da Chiang; Fan, Te Hua et al.
2023 IEEE CPMT Symposium Japan, ICSJ 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 156-159 (2023 IEEE CPMT Symposium Japan, ICSJ 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology

AU - Lin, Hsin Chieh

AU - Chang, Da Chiang

AU - Fan, Te Hua

AU - Chiou, Hwann Kaeo

PY - 2023

Y1 - 2023

N2 - This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range. The power amplifier was manufactured using WIN™ Semiconductors' 0.25-?m Gallium Nitride/Silicon Carbide (GaN/SiC) technology and GaAs IPD technology. The GaN and GaAs IPD chips for the proposed power amplifier were assembled using Chip-on-Board wire-bond assembly technology. The power amplifier exhibited a gain of 18.5 dB, a 3-dB bandwidth from 3.6 GHz to 4.5 GHz, a saturation power of 38.4 dBm, and a peak power-added efficiency of 32.8%. In the context of a 5G NR FR1 256-QAM modulated signal with a 100-MHz bandwidth, the power amplifier demonstrated an average output power of 29.9 dBm under an error vector magnitude 3.5% limitation.

AB - This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range. The power amplifier was manufactured using WIN™ Semiconductors' 0.25-?m Gallium Nitride/Silicon Carbide (GaN/SiC) technology and GaAs IPD technology. The GaN and GaAs IPD chips for the proposed power amplifier were assembled using Chip-on-Board wire-bond assembly technology. The power amplifier exhibited a gain of 18.5 dB, a 3-dB bandwidth from 3.6 GHz to 4.5 GHz, a saturation power of 38.4 dBm, and a peak power-added efficiency of 32.8%. In the context of a 5G NR FR1 256-QAM modulated signal with a 100-MHz bandwidth, the power amplifier demonstrated an average output power of 29.9 dBm under an error vector magnitude 3.5% limitation.

KW - Doherty

KW - GaAs

KW - GaN/SiC

KW - IPD

KW - Power Amplifier (PA)

UR - https://www.scopus.com/pages/publications/85182018428

U2 - 10.1109/ICSJ59341.2023.10339579

DO - 10.1109/ICSJ59341.2023.10339579

M3 - 會議論文篇章

AN - SCOPUS:85182018428

T3 - 2023 IEEE CPMT Symposium Japan, ICSJ 2023

SP - 156

EP - 159

BT - 2023 IEEE CPMT Symposium Japan, ICSJ 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th IEEE CPMT Symposium Japan, ICSJ 2023

Y2 - 15 November 2023 through 17 November 2023

ER -

A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology

Abstract

Publication series

Conference

Keywords

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Projects

Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications(3/3)

Cite this