A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology

Hsin Chieh Lin, Da Chiang Chang, Te Hua Fan, Hwann Kaeo Chiou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range. The power amplifier was manufactured using WIN™ Semiconductors' 0.25-?m Gallium Nitride/Silicon Carbide (GaN/SiC) technology and GaAs IPD technology. The GaN and GaAs IPD chips for the proposed power amplifier were assembled using Chip-on-Board wire-bond assembly technology. The power amplifier exhibited a gain of 18.5 dB, a 3-dB bandwidth from 3.6 GHz to 4.5 GHz, a saturation power of 38.4 dBm, and a peak power-added efficiency of 32.8%. In the context of a 5G NR FR1 256-QAM modulated signal with a 100-MHz bandwidth, the power amplifier demonstrated an average output power of 29.9 dBm under an error vector magnitude 3.5% limitation.

Original languageEnglish
Title of host publication2023 IEEE CPMT Symposium Japan, ICSJ 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages156-159
Number of pages4
ISBN (Electronic)9798350325157
DOIs
StatePublished - 2023
Event12th IEEE CPMT Symposium Japan, ICSJ 2023 - Kyoto, Japan
Duration: 15 Nov 202317 Nov 2023

Publication series

Name2023 IEEE CPMT Symposium Japan, ICSJ 2023

Conference

Conference12th IEEE CPMT Symposium Japan, ICSJ 2023
Country/TerritoryJapan
CityKyoto
Period15/11/2317/11/23

Keywords

  • Doherty
  • GaAs
  • GaN/SiC
  • IPD
  • Power Amplifier (PA)

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