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Abstract
This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range. The power amplifier was manufactured using WIN™ Semiconductors' 0.25-?m Gallium Nitride/Silicon Carbide (GaN/SiC) technology and GaAs IPD technology. The GaN and GaAs IPD chips for the proposed power amplifier were assembled using Chip-on-Board wire-bond assembly technology. The power amplifier exhibited a gain of 18.5 dB, a 3-dB bandwidth from 3.6 GHz to 4.5 GHz, a saturation power of 38.4 dBm, and a peak power-added efficiency of 32.8%. In the context of a 5G NR FR1 256-QAM modulated signal with a 100-MHz bandwidth, the power amplifier demonstrated an average output power of 29.9 dBm under an error vector magnitude 3.5% limitation.
Original language | English |
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Title of host publication | 2023 IEEE CPMT Symposium Japan, ICSJ 2023 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 156-159 |
Number of pages | 4 |
ISBN (Electronic) | 9798350325157 |
DOIs | |
State | Published - 2023 |
Event | 12th IEEE CPMT Symposium Japan, ICSJ 2023 - Kyoto, Japan Duration: 15 Nov 2023 → 17 Nov 2023 |
Publication series
Name | 2023 IEEE CPMT Symposium Japan, ICSJ 2023 |
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Conference
Conference | 12th IEEE CPMT Symposium Japan, ICSJ 2023 |
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Country/Territory | Japan |
City | Kyoto |
Period | 15/11/23 → 17/11/23 |
Keywords
- Doherty
- GaAs
- GaN/SiC
- IPD
- Power Amplifier (PA)
Fingerprint
Dive into the research topics of 'A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology'. Together they form a unique fingerprint.Projects
- 1 Finished
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Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications(3/3)
Chiou, H.-K. (PI)
1/08/22 → 31/10/23
Project: Research