Abstract
This letter proposes a broadband and low-loss multiconductor-lines signal combiner in 90 nm CMOS. The signal combiner consists of one broadside-coupled balun, two broadband in-phase power dividers, one edge-coupled balun, and four impedance-transformation lines. By using thin-film microstrip lines to avoid the loss from silicon substrate, the signal combiner has a simulated insertion loss of 8.1 dB and port-to-port isolations better than 42 dB from 35 to 83 GHz. The signal combiner is then integrated into a source-pumped mixer, and a -1±1.5 -dB conversion gain and a 13 dBm average input IP3 at a 6.5 mW total dc power are achieved in measurements.
Original language | English |
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Article number | 6588362 |
Pages (from-to) | 548-550 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 23 |
Issue number | 10 |
DOIs | |
State | Published - 2013 |
Keywords
- Balun
- Broadside-coupled
- Linearity
- Mixer
- Multiconductor-lines
- Signal combiner
- Thin-film microstrip line