@inproceedings{282762ce4e1b4c86ad0fe4891bf64b54,
title = "A 3.5-GHz SiGe 0.35μm HBT flip-chip assembled on ceramics integrated passive device Doherty power amplifier for SiP integration",
abstract = "A 3.5-GHz SiGe 0.35μm HBT Doherty power amplifier (DPA) on ceramics integrated passive device (CIPD) using flip-chip assembled package for system in package (SiP) integration is reported in this paper. The unit cell power amplifier in the DPA demonstrates a saturated output power of 28dBm and 35\% PAE at P SAT. When the complete DPA is operated in the quasi-balanced mode, it demonstrates a P SAT of 30.5dBm (PAE = 31\%), and a PAE of 8\% at OP 1dB. When the complete DPA is operated in the quasi-Doherty mode, it has a P SAT of 30dBm with the same PAE, and an improved PAE of 27\% at OP 1dB. The excellent performance is mainly due to the high Q passive elements of CIPD. To the author's knowledge, this is the first demonstration of a watt-level PA using flip-chip assembled on CIPD process with good performance.",
keywords = "Doherty amplifier, Flip-chip, IPD, PAE, power amplifier",
author = "Kuo, \{Che Chung\} and Lin, \{Po An\} and Kuo, \{Jing Lin\} and Lu, \{Hsin Chia\} and Hsin, \{Yue Ming\} and Huei Wang",
year = "2011",
language = "???core.languages.en\_GB???",
isbn = "9780858259744",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "114--117",
booktitle = "Asia-Pacific Microwave Conference Proceedings, APMC 2011",
note = "Asia-Pacific Microwave Conference, APMC 2011 ; Conference date: 05-12-2011 Through 08-12-2011",
}