@inproceedings{282762ce4e1b4c86ad0fe4891bf64b54,
title = "A 3.5-GHz SiGe 0.35μm HBT flip-chip assembled on ceramics integrated passive device Doherty power amplifier for SiP integration",
abstract = "A 3.5-GHz SiGe 0.35μm HBT Doherty power amplifier (DPA) on ceramics integrated passive device (CIPD) using flip-chip assembled package for system in package (SiP) integration is reported in this paper. The unit cell power amplifier in the DPA demonstrates a saturated output power of 28dBm and 35% PAE at P SAT. When the complete DPA is operated in the quasi-balanced mode, it demonstrates a P SAT of 30.5dBm (PAE = 31%), and a PAE of 8% at OP 1dB. When the complete DPA is operated in the quasi-Doherty mode, it has a P SAT of 30dBm with the same PAE, and an improved PAE of 27% at OP 1dB. The excellent performance is mainly due to the high Q passive elements of CIPD. To the author's knowledge, this is the first demonstration of a watt-level PA using flip-chip assembled on CIPD process with good performance.",
keywords = "Doherty amplifier, Flip-chip, IPD, PAE, power amplifier",
author = "Kuo, {Che Chung} and Lin, {Po An} and Kuo, {Jing Lin} and Lu, {Hsin Chia} and Hsin, {Yue Ming} and Huei Wang",
year = "2011",
language = "???core.languages.en_GB???",
isbn = "9780858259744",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "114--117",
booktitle = "Asia-Pacific Microwave Conference Proceedings, APMC 2011",
note = "Asia-Pacific Microwave Conference, APMC 2011 ; Conference date: 05-12-2011 Through 08-12-2011",
}