A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology

Lung Yi Chen; Jia Shiang Fu

doi:10.1109/RFIT52905.2021.9565317

A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology

Lung Yi Chen, Jia Shiang Fu

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A power amplifier (PA) is designed at 3.5 GHz for 5G small-cell base station applications. The proposed PA is implemented in WIN 0.25-μ m GaN HEMT technology. The chip area is 1 × 1 mm 2. Measurement results show that, from 3.3 to 3.8 GHz, the input return loss and gain of the PA are greater than 10.2 dB and 12.6 dB, respectively. At 3.5 GHz, the measured OP1dB and the corresponding PAE are 33 dBm (2 W) and 44%, respectively.

Original language	English
Title of host publication	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665433914
DOIs	https://doi.org/10.1109/RFIT52905.2021.9565317
State	Published - 25 Aug 2021
Event	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan Duration: 25 Aug 2021 → 27 Aug 2021

Publication series

Name	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/Territory	Taiwan
City	Hualien
Period	25/08/21 → 27/08/21

Keywords

5G
GaN HEMT
Power amplifier
sub-6 GHz

Access to Document

10.1109/RFIT52905.2021.9565317

Antenna-Integrated Millimeter-Wave Identification Tag Chips for Miniature Wireless Sensors
Fu, J.-S. (PI)
1/08/20 → 31/10/21
Project: Research
Millimeter-Wave Front-End Circuits for Active Phased-Array Cloud Radars
Fu, J.-S. (PI)
1/08/19 → 31/10/20
Project: Research

Cite this

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title = "A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology",

abstract = "A power amplifier (PA) is designed at 3.5 GHz for 5G small-cell base station applications. The proposed PA is implemented in WIN 0.25-μ m GaN HEMT technology. The chip area is 1 × 1 mm 2. Measurement results show that, from 3.3 to 3.8 GHz, the input return loss and gain of the PA are greater than 10.2 dB and 12.6 dB, respectively. At 3.5 GHz, the measured OP1dB and the corresponding PAE are 33 dBm (2 W) and 44%, respectively.",

keywords = "5G, GaN HEMT, Power amplifier, sub-6 GHz",

author = "Chen, {Lung Yi} and Fu, {Jia Shiang}",

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Chen, LY & Fu, JS 2021, A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology. in 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Institute of Electrical and Electronics Engineers Inc., 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Hualien, Taiwan, 25/08/21. https://doi.org/10.1109/RFIT52905.2021.9565317

A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology. / Chen, Lung Yi; Fu, Jia Shiang.
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - A power amplifier (PA) is designed at 3.5 GHz for 5G small-cell base station applications. The proposed PA is implemented in WIN 0.25-μ m GaN HEMT technology. The chip area is 1 × 1 mm 2. Measurement results show that, from 3.3 to 3.8 GHz, the input return loss and gain of the PA are greater than 10.2 dB and 12.6 dB, respectively. At 3.5 GHz, the measured OP1dB and the corresponding PAE are 33 dBm (2 W) and 44%, respectively.

AB - A power amplifier (PA) is designed at 3.5 GHz for 5G small-cell base station applications. The proposed PA is implemented in WIN 0.25-μ m GaN HEMT technology. The chip area is 1 × 1 mm 2. Measurement results show that, from 3.3 to 3.8 GHz, the input return loss and gain of the PA are greater than 10.2 dB and 12.6 dB, respectively. At 3.5 GHz, the measured OP1dB and the corresponding PAE are 33 dBm (2 W) and 44%, respectively.

KW - 5G

KW - GaN HEMT

KW - Power amplifier

KW - sub-6 GHz

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T3 - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

BT - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Y2 - 25 August 2021 through 27 August 2021

ER -

A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology

Abstract

Publication series

Conference

Keywords

Access to Document

Fingerprint

Projects

Antenna-Integrated Millimeter-Wave Identification Tag Chips for Miniature Wireless Sensors

Millimeter-Wave Front-End Circuits for Active Phased-Array Cloud Radars

Cite this