A 30-GHz low-phase-noise 0.35-μm CMOS push-push oscillator using micromachined inductors

To Po Wang; Ren Chieh Liu; Hong Yeh Chang; Jeng Han Tsai; Liang Hung Lu; Huei Wang

doi:10.1109/MWSYM.2006.249657

A 30-GHz low-phase-noise 0.35-μm CMOS push-push oscillator using micromachined inductors

To Po Wang, Ren Chieh Liu, Hong Yeh Chang, Jeng Han Tsai, Liang Hung Lu, Huei Wang

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

A low-phase-noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors is presented in this paper. With the micromachined high-Q inductors, the oscillator achieves an oscillating frequency of 30.9 GHz while exhibiting an output power of -4 dBm with a low phase noise of -102.3 dBc/Hz at 1-MHz offset and the figure of merit (FoM) of -171.4 dBc/Hz. The fundamental rejection is 30 dB. This oscillator achieves low phase noise, good FOM, high output power, and also demonstrates the highest operating frequency among previously published Si-based and GaAs-based VCOs using micromachined structures.

Original language	English
Article number	4014963
Pages (from-to)	569-572
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
DOIs	https://doi.org/10.1109/MWSYM.2006.249657
State	Published - 2006
Event	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: 11 Jun 2006 → 16 Jun 2006

Keywords

Micromachined inductors
Voltage-controlled oscillators (VCOs)

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10.1109/MWSYM.2006.249657

Cite this

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title = "A 30-GHz low-phase-noise 0.35-μm CMOS push-push oscillator using micromachined inductors",

abstract = "A low-phase-noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors is presented in this paper. With the micromachined high-Q inductors, the oscillator achieves an oscillating frequency of 30.9 GHz while exhibiting an output power of -4 dBm with a low phase noise of -102.3 dBc/Hz at 1-MHz offset and the figure of merit (FoM) of -171.4 dBc/Hz. The fundamental rejection is 30 dB. This oscillator achieves low phase noise, good FOM, high output power, and also demonstrates the highest operating frequency among previously published Si-based and GaAs-based VCOs using micromachined structures.",

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T1 - A 30-GHz low-phase-noise 0.35-μm CMOS push-push oscillator using micromachined inductors

AU - Wang, To Po

AU - Liu, Ren Chieh

AU - Chang, Hong Yeh

AU - Tsai, Jeng Han

AU - Lu, Liang Hung

AU - Wang, Huei

PY - 2006

Y1 - 2006

N2 - A low-phase-noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors is presented in this paper. With the micromachined high-Q inductors, the oscillator achieves an oscillating frequency of 30.9 GHz while exhibiting an output power of -4 dBm with a low phase noise of -102.3 dBc/Hz at 1-MHz offset and the figure of merit (FoM) of -171.4 dBc/Hz. The fundamental rejection is 30 dB. This oscillator achieves low phase noise, good FOM, high output power, and also demonstrates the highest operating frequency among previously published Si-based and GaAs-based VCOs using micromachined structures.

AB - A low-phase-noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors is presented in this paper. With the micromachined high-Q inductors, the oscillator achieves an oscillating frequency of 30.9 GHz while exhibiting an output power of -4 dBm with a low phase noise of -102.3 dBc/Hz at 1-MHz offset and the figure of merit (FoM) of -171.4 dBc/Hz. The fundamental rejection is 30 dB. This oscillator achieves low phase noise, good FOM, high output power, and also demonstrates the highest operating frequency among previously published Si-based and GaAs-based VCOs using micromachined structures.

KW - Micromachined inductors

KW - Voltage-controlled oscillators (VCOs)

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DO - 10.1109/MWSYM.2006.249657

M3 - 會議論文

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A 30-GHz low-phase-noise 0.35-μm CMOS push-push oscillator using micromachined inductors

Abstract

Keywords

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