A 30-GHz 10-dB low noise amplifier using standard 0.18-μm CMOS technology

Hsin Lung Tu, Tsung Yu Yang, Kung Hao Liang, Hwann Kaeo Chiou

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A three-stage 30-GHz law noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm CMOS technology. The LNA has demonstrated a 10-dB gain and a minimum noise figure of 5.2 dB at 30 GHz. The achieved input 1-dB compression point (IP1 dB) and third order intercept point (IP3) are -7 and +2.5 dBm, with total current of 16 mA from a 1.5-V power supply. To the author's knowledge, the LNA shows the best overall performances ever reported in standard0.18-μm CMOS process.

Original languageEnglish
Pages (from-to)647-649
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume49
Issue number3
DOIs
StatePublished - Mar 2007

Keywords

  • 0.18-μm CMOS
  • Low noise amplifier
  • MMIC

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