A 30-50 GHz wide modulation bandwidth bidirectional BPSK demodulator/ modulator with low LO power

Hong Yeh Chang; Shou Hsien Weng; Chau Ching Chiong

doi:10.1109/LMWC.2009.2017615

A 30-50 GHz wide modulation bandwidth bidirectional BPSK demodulator/ modulator with low LO power

Hong Yeh Chang, Shou Hsien Weng, Chau Ching Chiong

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A 30-50 GHz wide modulation bandwidth bidirectional binary phase shift keying (BPSK) demodulator/modulator using a 2 μm standard GaAs HBT process is presented in this letter. A single balanced mixer with HBT PN-junction diodes is employed in the circuit design. With a local oscillator (LO) power of 0 dBm, this letter demonstrates a maximum conversion loss of 13 dB, a modulation bandwidth of wider than 3 GHz, and a LO-to-RF isolation of better than 45 dB. The BPSK demodulation or modulation can be performed at the same input/output ports of the circuit, and therefore it can be applied to millimeter-wave (MMW) gigabit bidirectional communication systems to further reduce the complexity of the transceivers.

Original language	English
Article number	4840506
Pages (from-to)	332-334
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	19
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2009.2017615
State	Published - May 2009

Keywords

Bidirectional
Binary phase shift keying (BPSK)
Demodulator
Modulator

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10.1109/LMWC.2009.2017615

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@article{8642a18678f64554b5c52b575ec3aaa1,

title = "A 30-50 GHz wide modulation bandwidth bidirectional BPSK demodulator/ modulator with low LO power",

abstract = "A 30-50 GHz wide modulation bandwidth bidirectional binary phase shift keying (BPSK) demodulator/modulator using a 2 μm standard GaAs HBT process is presented in this letter. A single balanced mixer with HBT PN-junction diodes is employed in the circuit design. With a local oscillator (LO) power of 0 dBm, this letter demonstrates a maximum conversion loss of 13 dB, a modulation bandwidth of wider than 3 GHz, and a LO-to-RF isolation of better than 45 dB. The BPSK demodulation or modulation can be performed at the same input/output ports of the circuit, and therefore it can be applied to millimeter-wave (MMW) gigabit bidirectional communication systems to further reduce the complexity of the transceivers.",

keywords = "Bidirectional, Binary phase shift keying (BPSK), Demodulator, Modulator",

author = "Chang, {Hong Yeh} and Weng, {Shou Hsien} and Chiong, {Chau Ching}",

note = "Funding Information: Manuscript received October 20, 2008; revised January 14, 2009. First published April 24, 2009; current version published May 08, 2009. This work was supported in part by the National Science Council of Taiwan, under Grants NSC 96-2221-E-008-117-MY3, NSC 96-2228-E-008-073-MY3, and the ALMA-T research project, and by the Chip Implementation Center (CIC), Taiwan.",

year = "2009",

month = may,

doi = "10.1109/LMWC.2009.2017615",

language = "???core.languages.en_GB???",

volume = "19",

pages = "332--334",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

number = "5",

}

TY - JOUR

T1 - A 30-50 GHz wide modulation bandwidth bidirectional BPSK demodulator/ modulator with low LO power

AU - Chang, Hong Yeh

AU - Weng, Shou Hsien

AU - Chiong, Chau Ching

N1 - Funding Information: Manuscript received October 20, 2008; revised January 14, 2009. First published April 24, 2009; current version published May 08, 2009. This work was supported in part by the National Science Council of Taiwan, under Grants NSC 96-2221-E-008-117-MY3, NSC 96-2228-E-008-073-MY3, and the ALMA-T research project, and by the Chip Implementation Center (CIC), Taiwan.

PY - 2009/5

Y1 - 2009/5

N2 - A 30-50 GHz wide modulation bandwidth bidirectional binary phase shift keying (BPSK) demodulator/modulator using a 2 μm standard GaAs HBT process is presented in this letter. A single balanced mixer with HBT PN-junction diodes is employed in the circuit design. With a local oscillator (LO) power of 0 dBm, this letter demonstrates a maximum conversion loss of 13 dB, a modulation bandwidth of wider than 3 GHz, and a LO-to-RF isolation of better than 45 dB. The BPSK demodulation or modulation can be performed at the same input/output ports of the circuit, and therefore it can be applied to millimeter-wave (MMW) gigabit bidirectional communication systems to further reduce the complexity of the transceivers.

AB - A 30-50 GHz wide modulation bandwidth bidirectional binary phase shift keying (BPSK) demodulator/modulator using a 2 μm standard GaAs HBT process is presented in this letter. A single balanced mixer with HBT PN-junction diodes is employed in the circuit design. With a local oscillator (LO) power of 0 dBm, this letter demonstrates a maximum conversion loss of 13 dB, a modulation bandwidth of wider than 3 GHz, and a LO-to-RF isolation of better than 45 dB. The BPSK demodulation or modulation can be performed at the same input/output ports of the circuit, and therefore it can be applied to millimeter-wave (MMW) gigabit bidirectional communication systems to further reduce the complexity of the transceivers.

KW - Bidirectional

KW - Binary phase shift keying (BPSK)

KW - Demodulator

KW - Modulator

UR - http://www.scopus.com/inward/record.url?scp=67649170457&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2009.2017615

DO - 10.1109/LMWC.2009.2017615

M3 - 期刊論文

AN - SCOPUS:67649170457

SN - 1531-1309

VL - 19

SP - 332

EP - 334

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 5

M1 - 4840506

ER -

A 30-50 GHz wide modulation bandwidth bidirectional BPSK demodulator/ modulator with low LO power

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Keywords

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