A 28 dBm Pout 5-GHz CMOS power amplifier using integrated passive device power combining transformer

Kuei Cheng Lin, Hwann Kaeo Chiou, Po Chang Wu, Chun Lin Ko, Hann Huei Tsai, Ying Zong Juang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations


This work presents a 5-GHz power amplifier (PA) based on a tsmc™ 0.18-μm CMOS process. A high quality factor (Q) transformer for use by the PA was fabricated using wafer-level integrated passive device (IPD) technology and stacked on top of the active region of the CMOS PA chip. PAs with and without the IPD transformer were designed and their performance was compared. For a 1.8-V supply voltage, the IPD CMOS-PA achieved an output power of 28 dBm and power added efficiency (PAE) of 25%; these were, respectively, 1.3 dBm and 6% higher than the corresponding output parameters of the typical CMOS PA at the same power consumption. In sending OFDM/64-QAM modulated signals, the IPD CMOS-PA produced a measured adjacent channel power radio (ACPR) and error vector magnitude (EVM) of -43 dBc and 1.6%, respectively.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Number of pages3
StatePublished - 2013
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
Duration: 5 Nov 20138 Nov 2013

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC


Conference2013 3rd Asia-Pacific Microwave Conference, APMC 2013
Country/TerritoryKorea, Republic of


  • Adjacent channel power ratio (ACPR)
  • CMOS
  • error vector magnitude (EVM)
  • Integrated passive device (IPD)
  • Power amplifier (PA)


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