Abstract
A 2.6-GHz power amplifier was implemented with a 0.18 μm RF CMOS process. The matching networks were fully integrated without any external components. To increase the output power, the power combining technique was adopted and realized by a 2:1 on-chip transformer, which was designed to provide an optimum load for the power cell. The measured efficiency of this power combining transformer is about 75% at 2.6 GHz. The proposed power amplifier exhibits maximum output power of 26.7 dBm with power-added efficiency of 18.1%. The power gain is 13.6 dB under 3.3 V supply voltage. Moreover, this letter shows good agreement between simulated and measured results.
Original language | English |
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Pages (from-to) | 299-302 |
Number of pages | 4 |
Journal | Microwave and Optical Technology Letters |
Volume | 52 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2010 |
Keywords
- CMOS
- Fully integrated
- Power amplifier
- Power combining
- Transformer