A 2.6-GHz fully integrated cmos power amplifier using power-combining transformer

Hwann Kaeo Chiou, Hsien Yuan Liao, Chien Chung Chen, Shih Ming Wang, Cheng Chung Chen

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


A 2.6-GHz power amplifier was implemented with a 0.18 μm RF CMOS process. The matching networks were fully integrated without any external components. To increase the output power, the power combining technique was adopted and realized by a 2:1 on-chip transformer, which was designed to provide an optimum load for the power cell. The measured efficiency of this power combining transformer is about 75% at 2.6 GHz. The proposed power amplifier exhibits maximum output power of 26.7 dBm with power-added efficiency of 18.1%. The power gain is 13.6 dB under 3.3 V supply voltage. Moreover, this letter shows good agreement between simulated and measured results.

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalMicrowave and Optical Technology Letters
Issue number2
StatePublished - Feb 2010


  • CMOS
  • Fully integrated
  • Power amplifier
  • Power combining
  • Transformer


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