@inproceedings{2f65098d52044b1bb02e76f4169f7235,
title = "A 26 - 65 GHz GaAs pHEMT cascaded single stage distributed amplifier with high gain/area efficiency",
abstract = "This paper demonstrates the design of a miniature three-stage cascaded single stage distributed amplifier (CSSDA), which functions over the frequency range from 26 GHz to 65 GHz with a 16.5 dB small signal gain and a gain bandwidth product (GBW) of 260 GHz. This three-stage CSSDA was designed and fabricated using a 0.15 μm GaAs-based pseudomorphic high electron-mobility transistor (pHEMT) MMIC foundry process provided by WIN Semiconductor, and the chip size is compact as 1.65 × 0.83 mm2 which yields the best gain/area efficiency among the previous works.",
keywords = "Broadband amplifier, Cascaded single-stage distributed amplifier (CSSDA), Distributed amplifier (DA), Monolithic microwave integrated circuit (MMIC)",
author = "Lin, {Kai Yun} and Chen, {I. Shan} and Chiou, {Hwann Kaeo}",
year = "2006",
doi = "10.1109/APMC.2006.4429521",
language = "???core.languages.en_GB???",
isbn = "4902339099",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "722--725",
booktitle = "2006 Asia-Pacific Microwave Conference Proceedings, APMC",
note = "2006 Asia-Pacific Microwave Conference, APMC ; Conference date: 12-12-2006 Through 15-12-2006",
}