A 26 - 65 GHz GaAs pHEMT cascaded single stage distributed amplifier with high gain/area efficiency

Kai Yun Lin, I. Shan Chen, Hwann Kaeo Chiou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper demonstrates the design of a miniature three-stage cascaded single stage distributed amplifier (CSSDA), which functions over the frequency range from 26 GHz to 65 GHz with a 16.5 dB small signal gain and a gain bandwidth product (GBW) of 260 GHz. This three-stage CSSDA was designed and fabricated using a 0.15 μm GaAs-based pseudomorphic high electron-mobility transistor (pHEMT) MMIC foundry process provided by WIN Semiconductor, and the chip size is compact as 1.65 × 0.83 mm2 which yields the best gain/area efficiency among the previous works.

Original languageEnglish
Title of host publication2006 Asia-Pacific Microwave Conference Proceedings, APMC
Pages722-725
Number of pages4
DOIs
StatePublished - 2006
Event2006 Asia-Pacific Microwave Conference, APMC - Yokohama, Japan
Duration: 12 Dec 200615 Dec 2006

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2

Conference

Conference2006 Asia-Pacific Microwave Conference, APMC
Country/TerritoryJapan
CityYokohama
Period12/12/0615/12/06

Keywords

  • Broadband amplifier
  • Cascaded single-stage distributed amplifier (CSSDA)
  • Distributed amplifier (DA)
  • Monolithic microwave integrated circuit (MMIC)

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