A 24-GHz highly integrated transceiver in 0.5-μm E/D-PHEMT process for FMCW automotive radar applications

Chi Hsien Lin, Yi Shuo Wu, Yen Liang Yeh, Shou Hsien Weng, Guan Yu Chen, Che Hao Shen, Hong Yeh Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

This paper describes a 24-GHz highly integrated transceiver in 0.5-μm E/D-PHEMT process for frequency-modulation continuous-wave (FMCW) automotive radar applications. The transceiver includes a voltage controlled oscillator (VCO), a power amplifier (PA), a buffer amplifier (BA), a low noise amplifier (LNA), and a down converter mixer. The transmitter delivers a RF output power of 13 dBm with a dc supply voltage of 5 V. The conversion gain and noise figure of the receiver are better than 9 and 8.7 dB, respectively. The chip size of the transceiver is 3×2 mm2.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Pages512-515
Number of pages4
StatePublished - 2010
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: 7 Dec 201010 Dec 2010

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2010 Asia-Pacific Microwave Conference, APMC 2010
Country/TerritoryJapan
CityYokohama
Period7/12/1010/12/10

Keywords

  • Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT)
  • frequency modulation continuous wave (FMCW)
  • microwave
  • radar

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