@inproceedings{bd721966d4df49e2aefb8f265caa7f7e,
title = "A 24-GHz highly integrated transceiver in 0.5-μm E/D-PHEMT process for FMCW automotive radar applications",
abstract = "This paper describes a 24-GHz highly integrated transceiver in 0.5-μm E/D-PHEMT process for frequency-modulation continuous-wave (FMCW) automotive radar applications. The transceiver includes a voltage controlled oscillator (VCO), a power amplifier (PA), a buffer amplifier (BA), a low noise amplifier (LNA), and a down converter mixer. The transmitter delivers a RF output power of 13 dBm with a dc supply voltage of 5 V. The conversion gain and noise figure of the receiver are better than 9 and 8.7 dB, respectively. The chip size of the transceiver is 3×2 mm2.",
keywords = "Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT), frequency modulation continuous wave (FMCW), microwave, radar",
author = "Lin, {Chi Hsien} and Wu, {Yi Shuo} and Yeh, {Yen Liang} and Weng, {Shou Hsien} and Chen, {Guan Yu} and Shen, {Che Hao} and Chang, {Hong Yeh}",
year = "2010",
language = "???core.languages.en_GB???",
isbn = "9784902339222",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "512--515",
booktitle = "2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010",
note = "2010 Asia-Pacific Microwave Conference, APMC 2010 ; Conference date: 07-12-2010 Through 10-12-2010",
}