A 22-GHz push-push CMOS oscillator using micromachined inductors

To Po Wang; Ren Chieh Liu; Hong Yeh Chang; Liang Hung Lu; Huei Wang

doi:10.1109/LMWC.2005.860003

A 22-GHz push-push CMOS oscillator using micromachined inductors

To Po Wang, Ren Chieh Liu, Hong Yeh Chang, Liang Hung Lu, Huei Wang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This letter presents a low phase noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors. This oscillator results in an improvement in phase noise compared with the previously published Si-based voltage-controlled oscillators (VCOs) around 20 GHz. With the high-Q inductors introduced by the micromachined structure, the oscillator achieves an oscillating frequency of 22.2 GHz while exhibiting an output power of - 7.5 dBm with a phase noise of -110.1 dBc/Hz at 1-MHz offset. This work also demonstrates the highest operating frequency among previously published Si-based VCOs using micromachined structures.

Original language	English
Pages (from-to)	859-861
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	15
Issue number	12
DOIs	https://doi.org/10.1109/LMWC.2005.860003
State	Published - Dec 2005

Keywords

Micromachined inductors
Voltage-controlled oscillators (VCOs)

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10.1109/LMWC.2005.860003

Cite this

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title = "A 22-GHz push-push CMOS oscillator using micromachined inductors",

abstract = "This letter presents a low phase noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors. This oscillator results in an improvement in phase noise compared with the previously published Si-based voltage-controlled oscillators (VCOs) around 20 GHz. With the high-Q inductors introduced by the micromachined structure, the oscillator achieves an oscillating frequency of 22.2 GHz while exhibiting an output power of - 7.5 dBm with a phase noise of -110.1 dBc/Hz at 1-MHz offset. This work also demonstrates the highest operating frequency among previously published Si-based VCOs using micromachined structures.",

keywords = "Micromachined inductors, Voltage-controlled oscillators (VCOs)",

author = "Wang, {To Po} and Liu, {Ren Chieh} and Chang, {Hong Yeh} and Lu, {Liang Hung} and Huei Wang",

note = "Funding Information: Manuscript received July 1, 2005; revised August 2, 2005. This work was supported in part by the National Science Council of Taiwan, R.O.C. under Contracts NSC 93-2752-E-002-002-PAE, NSC 93-2219-E-002-024, and NSC 93-2213-E-002-033, and by TSMC and GCTC through the Chip Implementation Center (CIC), Taiwan.",

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AU - Wang, To Po

AU - Liu, Ren Chieh

AU - Chang, Hong Yeh

AU - Lu, Liang Hung

AU - Wang, Huei

N1 - Funding Information: Manuscript received July 1, 2005; revised August 2, 2005. This work was supported in part by the National Science Council of Taiwan, R.O.C. under Contracts NSC 93-2752-E-002-002-PAE, NSC 93-2219-E-002-024, and NSC 93-2213-E-002-033, and by TSMC and GCTC through the Chip Implementation Center (CIC), Taiwan.

PY - 2005/12

Y1 - 2005/12

N2 - This letter presents a low phase noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors. This oscillator results in an improvement in phase noise compared with the previously published Si-based voltage-controlled oscillators (VCOs) around 20 GHz. With the high-Q inductors introduced by the micromachined structure, the oscillator achieves an oscillating frequency of 22.2 GHz while exhibiting an output power of - 7.5 dBm with a phase noise of -110.1 dBc/Hz at 1-MHz offset. This work also demonstrates the highest operating frequency among previously published Si-based VCOs using micromachined structures.

AB - This letter presents a low phase noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors. This oscillator results in an improvement in phase noise compared with the previously published Si-based voltage-controlled oscillators (VCOs) around 20 GHz. With the high-Q inductors introduced by the micromachined structure, the oscillator achieves an oscillating frequency of 22.2 GHz while exhibiting an output power of - 7.5 dBm with a phase noise of -110.1 dBc/Hz at 1-MHz offset. This work also demonstrates the highest operating frequency among previously published Si-based VCOs using micromachined structures.

KW - Micromachined inductors

KW - Voltage-controlled oscillators (VCOs)

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U2 - 10.1109/LMWC.2005.860003

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SN - 1531-1309

VL - 15

SP - 859

EP - 861

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 12

ER -

A 22-GHz push-push CMOS oscillator using micromachined inductors

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Keywords

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