A 20.7% locking range W-band fully integrated injection-locked oscillator using 90 nm CMOS technology

Yen Liang Yeh, Chih Sheng Huang, Hong Yeh Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

A 20.7% locking range W-band fully integrated injection-locked oscillator (ILO) using 90 nm CMOS technology is presented in this paper. The proposed ILO is designed using a ring-based triple-push topology. The free-running oscillation frequency of the ILO is 97.6 GHz. When the input subharmonic number is 3, the ILO demonstrates a locking range from 88.1 to 108.5 GHz without bias tuning, a minimum conversion loss of 14.6 dB, and an output power flatness of within 2 dB. When the input subharmonic number is 6, the locking range is from 96.1 to 98.4 GHz and the minimum conversion loss is 17.2 dB. The dc power consumption is 55.4 mW from L.2-V dc supply voltage. The chip size is 0.733 × 0.492 mm 2. As compared to the previously reported ILOs in the MMW band, our proposed ILO has the widest locking range and good power flatness.

Original languageEnglish
Title of host publicationIMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
DOIs
StatePublished - 2012
Event2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
Duration: 17 Jun 201222 Jun 2012

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2012 IEEE MTT-S International Microwave Symposium, IMS 2012
Country/TerritoryCanada
CityMontreal, QC
Period17/06/1222/06/12

Keywords

  • CMOS
  • Millimeter-wave
  • Oscillator
  • Phase noise
  • W-band

Fingerprint

Dive into the research topics of 'A 20.7% locking range W-band fully integrated injection-locked oscillator using 90 nm CMOS technology'. Together they form a unique fingerprint.

Cite this