A 15-50 GHz broadband resistive FET ring mixer using 0.18-μm CMOS technology

Jung Hau Chen, Che Chung Kuo, Yue Ming Hsin, Huei Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

51 Scopus citations

Abstract

A compact and broadband 15 to 50 GHz resistive FET ring mixer using 0.18-μm CMOS technology is presented in this letter. This mixer exhibits a conversion loss of 13-17 dB and the port to port isolations of better than 30 dB from 15-50 GHz for both down and up-conversion with a chip size of 0.2 mm 2. Besides, this mixer has an input P1dB of 4-10 dB and an IF bandwidth of 5GHz. To the author's knowledge, this is the highest frequency MMIC resistive FET ring mixer using CMOS technologies to date.

Original languageEnglish
Title of host publication2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Pages784-787
Number of pages4
DOIs
StatePublished - 2010
Event2010 IEEE MTT-S International Microwave Symposium, MTT 2010 - Anaheim, CA, United States
Duration: 23 May 201028 May 2010

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Country/TerritoryUnited States
CityAnaheim, CA
Period23/05/1028/05/10

Keywords

  • CMOS mixers
  • Down-conversion
  • Resistive FET ring mixers
  • Up-conversion

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