A 15-20 GHz Watt-level GaAs Power Amplifier Module Using Single-bias Technique

Yu Chia Su; Yu Cheng Liu; Hong Yeh Chang

doi:10.1109/APMC57107.2023.10439773

A 15-20 GHz Watt-level GaAs Power Amplifier Module Using Single-bias Technique

Yu Chia Su, Yu Cheng Liu, Hong Yeh Chang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents a single-bias method for a depletion-mode GaAs power amplifier (PA) module. The module utilizes a four-stage GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC). With the proposed single-bias method, the PA module achieves a 3-dB bandwidth ranging from 14 to 19 GHz, a maximum small-signal gain of 25 dB at 16.5 GHz, a saturated output power of 30 dBm, and a peak power added efficiency (PAE) of 11.8%. Incorporating the digital predistortion enables the module to reach an output power of up to 30 dBm. The measured error vector magnitude remains within 2% for the 64QAM modulation scheme. The superior performance of the proposed PA module, employing the single-bias method, makes it well-suited for satellite communications or point-to-multipoint radios.

Original language	English
Title of host publication	2023 Asia-Pacific Microwave Conference, APMC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	623-625
Number of pages	3
ISBN (Electronic)	9781665494182
DOIs	https://doi.org/10.1109/APMC57107.2023.10439773
State	Published - 2023
Event	31st Asia-Pacific Microwave Conference, APMC 2023 - Taipei, Taiwan Duration: 5 Dec 2023 → 8 Dec 2023

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
ISSN (Electronic)	2690-3946

Conference

Conference	31st Asia-Pacific Microwave Conference, APMC 2023
Country/Territory	Taiwan
City	Taipei
Period	5/12/23 → 8/12/23

Keywords

Digital pre-distortion
GaAs
microwave
power amplifier
satellite communication

Access to Document

10.1109/APMC57107.2023.10439773

使用異質整合積體電路技術之下世代毫米波通訊收發機研究(2/3)
Chang, H.-Y. (PI)
1/08/22 → 31/07/23
Project: Research

Cite this

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title = "A 15-20 GHz Watt-level GaAs Power Amplifier Module Using Single-bias Technique",

abstract = "This paper presents a single-bias method for a depletion-mode GaAs power amplifier (PA) module. The module utilizes a four-stage GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC). With the proposed single-bias method, the PA module achieves a 3-dB bandwidth ranging from 14 to 19 GHz, a maximum small-signal gain of 25 dB at 16.5 GHz, a saturated output power of 30 dBm, and a peak power added efficiency (PAE) of 11.8%. Incorporating the digital predistortion enables the module to reach an output power of up to 30 dBm. The measured error vector magnitude remains within 2% for the 64QAM modulation scheme. The superior performance of the proposed PA module, employing the single-bias method, makes it well-suited for satellite communications or point-to-multipoint radios.",

keywords = "Digital pre-distortion, GaAs, microwave, power amplifier, satellite communication",

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Su, YC, Liu, YC & Chang, HY 2023, A 15-20 GHz Watt-level GaAs Power Amplifier Module Using Single-bias Technique. in 2023 Asia-Pacific Microwave Conference, APMC 2023. Asia-Pacific Microwave Conference Proceedings, APMC, Institute of Electrical and Electronics Engineers Inc., pp. 623-625, 31st Asia-Pacific Microwave Conference, APMC 2023, Taipei, Taiwan, 5/12/23. https://doi.org/10.1109/APMC57107.2023.10439773

A 15-20 GHz Watt-level GaAs Power Amplifier Module Using Single-bias Technique. / Su, Yu Chia; Liu, Yu Cheng; Chang, Hong Yeh.
2023 Asia-Pacific Microwave Conference, APMC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 623-625 (Asia-Pacific Microwave Conference Proceedings, APMC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Liu, Yu Cheng

AU - Chang, Hong Yeh

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Y1 - 2023

N2 - This paper presents a single-bias method for a depletion-mode GaAs power amplifier (PA) module. The module utilizes a four-stage GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC). With the proposed single-bias method, the PA module achieves a 3-dB bandwidth ranging from 14 to 19 GHz, a maximum small-signal gain of 25 dB at 16.5 GHz, a saturated output power of 30 dBm, and a peak power added efficiency (PAE) of 11.8%. Incorporating the digital predistortion enables the module to reach an output power of up to 30 dBm. The measured error vector magnitude remains within 2% for the 64QAM modulation scheme. The superior performance of the proposed PA module, employing the single-bias method, makes it well-suited for satellite communications or point-to-multipoint radios.

AB - This paper presents a single-bias method for a depletion-mode GaAs power amplifier (PA) module. The module utilizes a four-stage GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC). With the proposed single-bias method, the PA module achieves a 3-dB bandwidth ranging from 14 to 19 GHz, a maximum small-signal gain of 25 dB at 16.5 GHz, a saturated output power of 30 dBm, and a peak power added efficiency (PAE) of 11.8%. Incorporating the digital predistortion enables the module to reach an output power of up to 30 dBm. The measured error vector magnitude remains within 2% for the 64QAM modulation scheme. The superior performance of the proposed PA module, employing the single-bias method, makes it well-suited for satellite communications or point-to-multipoint radios.

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KW - microwave

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Y2 - 5 December 2023 through 8 December 2023

ER -

A 15-20 GHz Watt-level GaAs Power Amplifier Module Using Single-bias Technique

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使用異質整合積體電路技術之下世代毫米波通訊收發機研究(2/3)

Cite this