@inproceedings{2cce57483ddd41aa8e1c103a0150e1a5,
title = "A 12-to-17 GHz power amplifier using T-model matching network in 0.25-μm GaN pHEMT technology",
abstract = "A Ku-band power amplifier (PA) with T-model matching network is implemented using 0.25 μm GaN pHEMT process in this paper. To achieve broadband with high output power, the output matching of the PA is realized using the T-model matching network. Between 12 and 17 GHz, the small-signal gain and saturation output power (Psat) are higher than 12 dB and 29 dBm, resepectively. The measured maximum small-signal gain is 12 dB as the frequency is 16 GHz. When the supply voltage is 25 V, the proposed PA demonstrated a Psat of 27 dBm over the frequency, and a maximum power-added efficiency (PAE) of higher than 8% at 15 GHz.",
keywords = "GaN, Ku-band, Microwave, Millimeterwave, MMIC, Power amplifier",
author = "Huang, {Hsuan Yin} and Huang, {Jyun Jia} and Cai, {Jhih Bin} and Chang, {Hong Yeh}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 ; Conference date: 10-12-2019 Through 13-12-2019",
year = "2019",
month = dec,
doi = "10.1109/APMC46564.2019.9038629",
language = "???core.languages.en_GB???",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "980--982",
booktitle = "Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019",
}