A 12-to-17 GHz power amplifier using T-model matching network in 0.25-μm GaN pHEMT technology

Hsuan Yin Huang, Jyun Jia Huang, Jhih Bin Cai, Hong Yeh Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A Ku-band power amplifier (PA) with T-model matching network is implemented using 0.25 μm GaN pHEMT process in this paper. To achieve broadband with high output power, the output matching of the PA is realized using the T-model matching network. Between 12 and 17 GHz, the small-signal gain and saturation output power (Psat) are higher than 12 dB and 29 dBm, resepectively. The measured maximum small-signal gain is 12 dB as the frequency is 16 GHz. When the supply voltage is 25 V, the proposed PA demonstrated a Psat of 27 dBm over the frequency, and a maximum power-added efficiency (PAE) of higher than 8% at 15 GHz.

Original languageEnglish
Title of host publicationProceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages980-982
Number of pages3
ISBN (Electronic)9781728135175
DOIs
StatePublished - Dec 2019
Event2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore
Duration: 10 Dec 201913 Dec 2019

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2019-December

Conference

Conference2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
Country/TerritorySingapore
CitySingapore
Period10/12/1913/12/19

Keywords

  • GaN
  • Ku-band
  • Microwave
  • Millimeterwave
  • MMIC
  • Power amplifier

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