850-nm edge-illuminated Si photodiodes fabricated with CMOS-MEMS technology

Yu Chen Hsieh, Fang Ping Chou, Ching Wen Wang, Chih Ai Huang, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

This letter examines edge-illuminated silicon photodiodes (PDs) fabricated using standard CMOS technology operated at 850-nm wavelength. A micro-electro-mechanical systems (MEMS) process was employed to expose the illuminated surface and achieve edge illumination. A single-mode lensed fiber is employed to inject light into the depletion region of the PD directly, limiting and reducing the diffusive carriers within the bulk Si substrate. Through employing this procedure, this letter achieved a superior performance in the 3-dB bandwidth compared with that yielded by vertically illuminated PDs. The 5.4 GHz high bandwidth was obtained using an edge-illuminated PD with a 20 μm×15.6 μm active region.

Original languageEnglish
Article number6595029
Pages (from-to)2018-2021
Number of pages4
JournalIEEE Photonics Technology Letters
Volume25
Issue number20
DOIs
StatePublished - 2013

Keywords

  • Avalanche photodiodes
  • CMOS integrated circuits
  • edge-illuminated photodiodes
  • micro-electro-mechanical systems (MEMS)
  • photodetectors
  • photodiodes

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