5-GHz SiGe linearity power amplifier using integrated feedforward architecture for WLAN applications

Kuei Cheng Lin, Hwann Kaeo Chiou, Po Chang Wu, Hann Huei Tsai, Ying Zong Juang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

This work presents a 5-GHz power amplifier (PA) based on a tsmc™ 0.35-μm SiGe heterojunction bipolar transistor (HBT) process. The PA adopts an on-chip linearizer as a feedforward element that cancels third-order distortion at the PA output. The PA achieves an output 1-dB compression point (OP1dB) of 27 dBm, a power gain of 21.9 dB, and a power added efficiency of 31 %. Compared to a PA without a linearizer, the proposed PA improves the third-order distortion by 12 dB. For an OFDM/64-QAM signal, the error vector magnitude is minimized to 1.5 % at an output power of 18 dBm. The fabricated chip size is 2.17 mm2 and is suitable for use in a highly integrated PA.

Original languageEnglish
Title of host publication2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1508-1511
Number of pages4
ISBN (Print)9781479934324
DOIs
StatePublished - 2014
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: 1 Jun 20145 Jun 2014

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Country/TerritoryAustralia
CityMelbourne, VIC
Period1/06/145/06/14

Keywords

  • Error vector magnitude (EVM)
  • feedforward
  • power added efficiency (PAE)
  • power amplifier (PA)
  • SiGe HBT

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