@inproceedings{608c87e085e44725b88f325632228a0c,
title = "5-GHz SiGe linearity power amplifier using integrated feedforward architecture for WLAN applications",
abstract = "This work presents a 5-GHz power amplifier (PA) based on a tsmc{\texttrademark} 0.35-μm SiGe heterojunction bipolar transistor (HBT) process. The PA adopts an on-chip linearizer as a feedforward element that cancels third-order distortion at the PA output. The PA achieves an output 1-dB compression point (OP1dB) of 27 dBm, a power gain of 21.9 dB, and a power added efficiency of 31 %. Compared to a PA without a linearizer, the proposed PA improves the third-order distortion by 12 dB. For an OFDM/64-QAM signal, the error vector magnitude is minimized to 1.5 % at an output power of 18 dBm. The fabricated chip size is 2.17 mm2 and is suitable for use in a highly integrated PA.",
keywords = "Error vector magnitude (EVM), SiGe HBT, feedforward, power added efficiency (PAE), power amplifier (PA)",
author = "Lin, {Kuei Cheng} and Chiou, {Hwann Kaeo} and Wu, {Po Chang} and Tsai, {Hann Huei} and Juang, {Ying Zong}",
year = "2014",
doi = "10.1109/ISCAS.2014.6865433",
language = "???core.languages.en_GB???",
isbn = "9781479934324",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1508--1511",
booktitle = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014",
note = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}